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参数资料
| 型号： | ML46580S-992 |
| 元件分类： | 参考电压二极管 |
| 英文描述： | K BAND, 18 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE |
| 封装： | DIE |
| 文件页数： | 2/4页 |
| 文件大小： | 463K |
| 代理商： | ML46580S-992 |
M/A-COM Division of AMP Incorporated s North America: Tel. (800) 366-2266, Fax (800) 618-8883 s Asia/Pacific: Tel.+85 2 2111 8088,
Fax +85 2 2111 8087 s Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
The Preliminary Specification Data Sheet contains typical electrical specifications which may change prior to final introduction.
V1.00
Beam Lead Gallium Arsenide Tuning Varactor Diode
ML46580S-992
Electrical Measurements at Room Temperature d.c. and a.c. Parameters
MIL-STD-750
Test
Limits
No.
Characteristics
Symbol
Test Method
Conditions
Min.
Max.
Units
1Forward Voltage
V
F1
4011
I
F = 10A
—
1.4
V
2
Reverse Current 1
I
R1
4016
V
R = -12V
—
20
nA
3
Reverse Current 2
I
R2
4016
V
R = 18V
—
10
A
4
Junction Capacitance
C
J 4
4001
V
R = 4V
0.45
0.55
pF
F = 1 MHz
5
Quality Factor
Q
4
see Note 2
V
R = 4.0 v
3000
—
F = 1 MHz
6
Total Capacitance Ratio
C
T2 /C T12
4001
V
R = 2.0 v
4.5:1
6.5:1
—
V
R = 12 v
F = 1 MHz
see Note 3
7Gamma
γ
see Note 4
V
R = 2.0V to
1.125
1.375
—
V
R = 12V
Notes:
2. Quality Factor is measured on a sample of 10 Beam Lead devices selected at random from the production wafer and assembled in a ceramic
microstrip package. The measurement is carried out at a test frequency above 1 GHz and extrapolated to 50 MHz.
3. Total Capacitance Ratio is measured on the sample of 10 devices used for Q measurement.
4. Measurement/Calculation of Capacitance-Voltage Slope Exponent (Gamma).
The capacitances of a sample of 10 diodes taken at random from the production lot are measured at 2.0, 3.0, 4.0, 6.0, 8.0, 9.0, 10.0, 12.0, volts
reverse bias voltage. Junction capacitance C
J is calculated by subtracting the package capacitance of the test package. The Gamma values are
then calculated between each pair of adjacent voltages using the following formula:
Electrical Measurements at High and Low Temperature, -55°C to +125°C
MIL-STD-750
Test
Limits
No.
Characteristics
Symbol
Test Method
Conditions
Min.
Max.
Units
1
Reverse Current
I
R
4016
V
R = 12V
—
50
A
Parameter Drift Values
No.
Characteristics
Symbol
Change Limits
Test Conditions
2
Reverse Current
I
R
± 10 nA or ± 100% whichever is the
greater referred to the initial measurement
V
R = 12 Volts
3Forward Voltage
V
F
± 100 mV or ± 100%
I
F = 10 A
log
10 {Cj (VR1) / Cj (VR2) }
log
10 {VR2 + 1.3 / VR1 + 1.3}
γ =
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