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参数资料
| 型号： | ML46580S-992 |
| 元件分类： | 参考电压二极管 |
| 英文描述： | K BAND, 18 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE |
| 封装： | DIE |
| 文件页数： | 3/4页 |
| 文件大小： | 463K |
| 代理商： | ML46580S-992 |
M/A-COM Division of AMP Incorporated s North America: Tel. (800) 366-2266, Fax (800) 618-8883 s Asia/Pacific: Tel.+85 2 2111 8088,
Fax +85 2 2111 8087 s Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
The Preliminary Specification Data Sheet contains typical electrical specifications which may change prior to final introduction.
V1.00
Beam Lead Gallium Arsenide Tuning Varactor Diode
ML46580S-992
Conditions for High Temperature Reverse Bias Burn-In
No.
Characteristics
Symbol
Conditions
Units
2
Reverse Voltage
V
R
14 ± 1
V
3
Ambient Temperature
Tamb
+50 +0, -5
°C
Conditions for Operating Life Tests
No.
Characteristics
Symbol
Conditions
Units
1
Reverse Voltage
V
R
14 ± 1
V
2
Ambient Temperature
Tamb
+150 +0, -5
°C
Electrical Measurements at Intermediate Points and Completion of Endurance Testing
MIL-STD-750
Test
Limits
No.
Characteristics
Symbol
Test Method
Conditions
Min.
Max.
Units
1Forward Voltage
V
F
4011
I
F = 10 A
1.4
V
2
Reverse Current
I
R
4016
VR = 12 Volts
20
nA
3
Junction Capacitance
C
J 4
4001
V
R = 4 Volts
F = 1 MHz
C
J =C TOTAL - C PACKAGE
0.45
0.55
pF
Electrical Measurements During and on Completion of Radiation Testing (only if requested)
No.
Characteristics
Symbol
MIL-STD-750
Test Method
Test
Conditions
1.
Reverse Voltage
V
R
4016
V
R= 12 Volts
20 nA or 200%
whichever is greater
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