参数资料
| 型号： | MLD2N06CLT4G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH CLAMPED 2A 62V DPAK |
| 产品变化通告： | Product Obsolescence 30/Jun/2011 |
| 标准包装： | 2,500 |
| 系列： | SMARTDISCRETES™ |
| 类型： | 低端 |
| 输入类型： | 非反相 |
| 输出数： | 1 |
| 导通状态电阻： | 300 毫欧 |
| 电流 - 峰值输出： | 4.4A |
| 工作温度： | -50°C ~ 150°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | DPAK-3 |
| 包装： | 带卷 (TR) |
MLD2N06CL
DRAIN ? TO ? SOURCE AVALANCHE CHARACTERISTICS
Rating
Single Pulse Drain ? to ? Source Avalanche Energy
(Starting T J = 25 ° C, I D = 2.0 A, L = 40 mH)
Symbol
E AS
Value
80
Unit
mJ
ELECTRICAL CHARACTERISTICS (T C = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage (Internally Clamped)
(I D = 20 mAdc, V GS = 0 Vdc)
(I D = 20 mAdc, V GS = 0 Vdc, T J = 150 ° C)
Zero Gate Voltage Drain Current
(V DS = 40 Vdc, V GS = 0 Vdc)
(V DS = 40 Vdc, V GS = 0 Vdc, T J = 150 ° C)
Gate ? Source Leakage Current
(V G = 5.0 Vdc, V DS = 0 Vdc)
(V G = 5.0 Vdc, V DS = 0 Vdc, T J = 150 ° C)
V (BR)DSS
I DSS
I GSS
58
58
?
?
?
?
62
62
0.6
6.0
0.5
1.0
66
66
5.0
20
5.0
20
Vdc
m Adc
m Adc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
(I D = 250 m Adc, V DS = V GS )
(I D = 250 m Adc, V DS = V GS , T J = 150 ° C)
Static Drain Current Limit
(V GS = 5.0 Vdc, V DS = 10 Vdc)
(V GS = 5.0 Vdc, V DS = 10 Vdc, T J = 150 ° C)
Static Drain ? to ? Source On ? Resistance
(I D = 1.0 Adc, V GS = 5.0 Vdc)
(I D = 1.0 Adc, V GS = 5.0 Vdc, T J = 150 ° C)
Forward Transconductance (I D = 1.0 Adc, V DS = 10 Vdc)
Static Source ? to ? Drain Diode Voltage (I S = 1.0 Adc, V GS = 0 Vdc)
V GS(th)
I D(lim)
R DS(on)
g FS
V SD
1.0
0.6
3.8
1.6
?
?
1.0
?
1.5
1.0
4.4
2.4
0.3
0.53
1.4
1.1
2.0
1.6
5.2
2.9
0.4
0.7
?
1.5
Vdc
Adc
W
mhos
Vdc
RESISTIVE SWITCHING CHARACTERISTICS (Note 4)
Turn ? On Delay Time
t d(on)
?
1.0
1.5
m s
Rise Time
Turn ? Off Delay Time
Fall Time
(V DD = 30 Vdc, I D = 1.0 Adc,
V GS(on) = 5.0 Vdc, R GS = 25 W )
t r
t d(off)
t f
?
?
?
3.0
5.0
3.0
5.0
8.0
5.0
3. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperature.
5
T J = 25 ° C
6.0 V
4.0
V DS ≥ 7.5 V
- 55 ° C
25 ° C
4
3
5.5 V
5.0 V
4.5 V
4.0 V
3.5 V
3.5
3.0
2.5
T J = 150 ° C
2
3.0 V
2.0
1.5
1.0
1
2.5 V
2.0 V
0.5
0
0
2
4
6
8
0
0
1
2
3
4
5
6
7
8
V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. Output Characteristics
http://onsemi.com
2
V GS , GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Function
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