参数资料
| 型号： | MLD2N06CLT4G |
| 厂商： | ON Semiconductor |
| 文件页数： | 4/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH CLAMPED 2A 62V DPAK |
| 产品变化通告： | Product Obsolescence 30/Jun/2011 |
| 标准包装： | 2,500 |
| 系列： | SMARTDISCRETES™ |
| 类型： | 低端 |
| 输入类型： | 非反相 |
| 输出数： | 1 |
| 导通状态电阻： | 300 毫欧 |
| 电流 - 峰值输出： | 4.4A |
| 工作温度： | -50°C ~ 150°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | DPAK-3 |
| 包装： | 带卷 (TR) |
MLD2N06CL
6
1.0
5
V GS = 5 V
V DS = 10 V
0.8
I D = 1 A
4
0.6
3
2
0.4
25 ° C
100 ° C
1
0.2
T J = - 50 ° C
0
- 50
0
50
100
150
0
0
1
2 3
4 5 6
7 8
9
10
T J , JUNCTION TEMPERATURE ( ° C)
Figure 3. I D(lim) Variation
With Temperature
0.6
I D = 1 A
0.5
0.4
0.3
0.2
0.1
V GS = 4 V
V GS = 5 V
V GS , GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 4. R DS(on) Variation With
Gate ? To ? Source Voltage
0
- 50
0
50
100
150
T J , JUNCTION TEMPERATURE ( ° C)
Figure 5. On ? Resistance Variation With
Temperature
100
64.0
I D = 2 A
63.5
I D = 20 mA
80
63.0
60
40
20
62.5
62.0
61.5
61.0
60.5
0
25
50 75 100 125
150
60.0
- 50
0
50 100
150
T J , STARTING JUNCTION TEMPERATURE ( ° C)
Figure 6. Maximum Avalanche Energy
versus Junction Temperature
http://onsemi.com
4
T J = JUNCTION TEMPERATURE
Figure 7. Drain ? Source Sustaining
Voltage Variation With Temperature
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