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参数资料
| 型号： | MM121-20T |
| 厂商： | MICROSEMI CORP |
| 元件分类： | JFETs |
| 英文描述： | 50 A, 200 V, 0.045 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | HERMETIC SEALED, POWER MODULE-16 |
| 文件页数： | 1/4页 |
| 文件大小： | 92K |
| 代理商： | MM121-20T |
MM121-XX
SERIES
70/100/200/300/
500 Volts
75 - 200 Amps
Features
Compact and rugged construction offering weight and space savings
Available with PC board solderable pins (see mechanical outline below)
or threaded terminals (add “T” suffix to part number, see option below)
HPM (Hermetic Power Module)
Isolation voltage capability (in reference to the base) in excess of 3kV
Very low thermal resistance
Thermally matched construction provides excellent temperature and
power cycling capability
Additional voltage ratings or terminations available upon request
MIL-PRF-19500 screening available upon request
PART NUMBER
MM121-07
MM121-10
MM121-20
MM121-30
MM121-50
Drain-to-Source Breakdown Voltage
BVDSS
(Gate shorted to Emitter), @ Tj
≥ 25°C
Drain-to-Gate Breakdown Voltage
BVDGR
@ Tj
≥25°C, R
GS=1M
70 V
100 V
200 V
300 V
500 V
Gate-to-Source Voltage, continuous
VGS
transient
VGSM
+/- 20 V
+/- 30 V
+/- 20 V
+/- 30 V
+/- 20 V
+/- 30 V
+/- 20 V
+/- 30 V
+/- 20 V
+/- 30 V
Continuous Drain Current @ Tj= 25
°C,
ID25
Tj= 100
°C
ID100
76 A
60 A
75 A
60 A
50 A
40 A
30 A
24 A
20 A
Peak Drain Current, pulsewidth limited by T
j max,
IDM
300 A
200 A
160 A
96 A
Power Dissipation
PD
300 W
Thermal resistance,
per switch
R
Θ
jc,
(junction-to-base)
per module
0.25
°C/W
.06
°C/W
0.25
°C/W
.06
°C/W
0.25
°C/W
0.06
°C/W
0.25
°C/W
0.06
°C/W
0.25
°C/W
0.06
°C/W
Maximum Ratings per switch @ 25
°C (unless otherwise specified)
Mechanical Outline
Datasheet# MSC0337A
2830 S. Fairview St.
Santa Ana, CA 92704
PH: (714) 979-8220
FAX: (714) 966-5256
3 PHASE N-CHANNEL
POWER MOSFET
BRIDGE
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