- 您现在的位置：买卖IC网 > PDF目录17986 > MMBD101LT1G (ON Semiconductor)DIODE SCHOTTKY 225MW 7V SOT23 PDF资料下载
参数资料
| 型号： | MMBD101LT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/4页 |
| 文件大小： | 59K |
| 描述： | DIODE SCHOTTKY 225MW 7V SOT23 |
| 产品变化通告： | Wire Change 08/Jun/2009 |
| 产品目录绘图： | Rectifier SOT-23, SOT-23S |
| 标准包装： | 10 |
| 二极管类型： | 肖特基 - 单 |
| 电压 - 峰值反向(最大)： | 7V |
| 电容@ Vr, F： | 1pF @ 0V，1MHz |
| 功率耗散（最大）： | 225mW |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3（TO-236） |
| 包装： | 标准包装 |
| 产品目录页面： | 1567 (CN2011-ZH PDF) |
| 其它名称： | MMBD101LT1GOSDKR |
?
Semiconductor Components Industries, LLC, 2007
March, 2007 ? Rev. 3
1
Publication Order Number:
MBD101/D
MBD101, MMBD101LT1
Preferred Device
Schottky Barrier Diodes
Designed primarily for UHF mixer applications but suitable also for
use in detector and ultra?fast switching circuits. Supplied in an
inexpensive plastic package for low?cost, high?volume consumer
requirements. Also available in Surface Mount package.
Features
?
Low Noise Figure ? 6.0 dB Typ @ 1.0 GHz
?
Very Low Capacitance ? Less Than 1.0 pF
?
High Forward Conductance ? 0.5 V (Typ) @ IF
= 10 mA
?
Pb?Free Packages are Available
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
VR
7.0
V
Forward Power Dissipation
TA
= 25
°C MBD101
MMBD101LT1
Derate above 25°C MBD101
MMBD101LT1
PF
280
225
2.2
1.8
mW
mW/°C
Junction Temperature
TJ
+150
°C
Storage Temperature Range
Tstg
?55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage
(IR
= 10
A)
V(BR)R
7.0
10
?
V
Diode Capacitance
(VR
= 0, f = 1.0 MHz,
Note 1, page 2)
CD
?
0.88
1.0
pF
Forward Voltage
(IF
= 10 mA)
VF
?
0.5
0.6
V
Reverse Leakage
(VR
= 3.0 V)
IR
?
0.02
0.25
A
http://onsemi.com
SOT?23 (TO?236)
CASE 318
STYLE 8
Preferred
devices are recommended choices for future use
and best overall value.
1
2
3
Device Package Shipping?
ORDERING INFORMATION
MBD101 TO?92 5000 Units / Box
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MBD101G TO?92
(Pb?Free)
5000 Units / Box
MMBD101LT1 SOT?23 3000 / Tape & Reel
MMBD101LT1G SOT?23
(Pb?Free)
3000 / Tape & Reel
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1
4M M
A = Assembly Location
Y = Year
WW = Work Week
4M = Device Code (SOT?23)
M = Date Code*
= Pb?Free Package
(Note: Microdot may be in either location)
MARKING
DIAGRAMS
3
CATHODE
1
ANODE
2
CATHODE
1
ANODE
(Pin 2 Not Connected)
TO?92 2?Lead
CASE 182
STYLE 1
1
2
SILICON SCHOTTKY
BARRIER DIODES
MBD
101
AYWW
相关PDF资料 |
PDF描述 |
|---|---|
| LM113-200.0M-T | OSC 200.0000 MHZ 3.3V LVDS |
| PV36W501C01B00 | TRIMMER 500 OHM 0.5W TH |
| MDCG-4 27-38 | SWITCH REED SPST .5A 27-38 A/T |
| PM113-622.08M-T | OSC 622.0800 MHZ 3.3V LVPECL |
| PN12SHNA03QE | SWITCH PUSH SPDT 0.2A 30V |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBD101TS | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE |
| MMBD101W | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE |
| MMBD101WS | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE |
| MMBD110T1 | 制造商:LRC 制造商全称:Leshan Radio Company 功能描述:Schottky Barrier Diodes |
| MMBD1201 | 功能描述:整流器 High Conductance Ultra Fast RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
发布紧急采购，3分钟左右您将得到回复。