参数资料
型号: MMBD101LT1G
厂商: ON Semiconductor
文件页数: 2/4页
文件大小: 59K
描述: DIODE SCHOTTKY 225MW 7V SOT23
产品变化通告: Wire Change 08/Jun/2009
产品目录绘图: Rectifier SOT-23, SOT-23S
标准包装: 10
二极管类型: 肖特基 - 单
电压 - 峰值反向(最大): 7V
电容@ Vr, F: 1pF @ 0V,1MHz
功率耗散(最大): 225mW
封装/外壳: TO-236-3,SC-59,SOT-23-3
供应商设备封装: SOT-23-3(TO-236)
包装: 标准包装
产品目录页面: 1567 (CN2011-ZH PDF)
其它名称: MMBD101LT1GOSDKR
MBD101, MMBD101LT1
http://onsemi.com
2
TYPICAL CHARACTERISTICS
(TA
= 25
°C unless noted)
Figure 1. Reverse Leakage
TA, AMBIENT TEMPERATURE (°C)
Figure 2. Forward Voltage
VF, FORWARD VOLTAGE (VOLTS)
Figure 3. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Noise Figure
PLO, LOCAL OSCILLATOR POWER (mW)
, FORWARD CURRENT (mA)
I
F
, REVERSE LEAKAGE ( A)
I
R
1.00.1 0.2 0.5 2.01.0 105.0
11
3.0
0.6
0 1.0 2.0 3.0 4.0
1.0
0.9
0.8
0.7
0.1
0.3 0.4
100
0.0130 40 50 60 70 80 10090
0.1
130
110 120
0.07
0.05
0.02
2.0
0.5 0.6 0.7
1.0
0.7
0.5
10
1.0
Figure 5. Noise Figure Test Circuit
UHF
NOISE SOURCE
H.P. 349A
DIODE IN
TUNED
MOUNT
LOCAL
OSCILLATOR
IF AMPLIFIER
NF = 1.5 dB
f = 30 MHz
NOISE
FIGURE METER
H.P. 342A
NOTES ON TESTING AND SPECIFICATIONS
Note 1 — CD
is measured using a capacitance bridge (Boonton
Electronics Model 75A or equivalent).
Note 2 — Noise figure measured with diode under test in tuned
diode mount using UHF noise source and local oscillator
(LO) frequency of 1.0 GHz. The LO power is adjusted
for 1.0 mW. IF amplifier NF = 1.5 dB, f = 30 MHz, see
Figure 5.
Note 3 — LS
is measured on a package having a short instead of a
die, using an impedance bridge (Boonton Radio Model
250A RX Meter).
0.2
VR
= 3.0 V
5.0
4.0
7.0
6.0
9.0
8.0
10
LOCAL OSCILLATOR FREQUENCY = 1.0 GHz
(TEST CIRCUIT IN FIGURE 5)
TA
= 25
°C
TA
= ?40
°C
TA
= 85
°C
NF, NOISE FIGURE (dB)
C
D
,
CAPACITANCE (pF)
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