参数资料
型号: MMBD1405A
厂商: Fairchild Semiconductor
文件页数: 1/5页
文件大小: 61K
描述: DIODE ULTRA FAST 175V SOT-23
产品变化通告: Mold Compound Change 12/Dec/2007
标准包装: 3,000
电压 - 在 If 时为正向 (Vf)(最大): 1.1V @ 200mA
电流 - 在 Vr 时反向漏电: 100nA @ 175V
电流 - 平均整流 (Io)(每个二极管): 200mA
电压 - (Vr)(最大): 175V
反向恢复时间(trr): 50ns
二极管类型: 标准
速度: 小信号 =< 200mA(Io),任意速度
二极管配置: 1 对共阳极
安装类型: 表面贴装
封装/外壳: TO-236-3,SC-59,SOT-23-3
供应商设备封装: SOT-23-3(TO-236)
包装: 带卷 (TR)
?2004 Fairchild Semiconductor Corporation
MMBD1401A / 1403A / 1404A / 1405A, Rev. A1
MMBD1401A / 1403A / 1404A / 1405A
High Voltage General Purpose Diode
Sourced from Process 2V.
Absolute Maximum Ratings *
TA
= 25
°C unless otherwise noted
* These ratings are limiting values above which the serviceability of the diode may be impaired.
NOTES:
1) These ratings are based on maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
* Device mounted on glass epoxy PCB 1.6” ×
1.6”
×
0.06”; mounting pad for the collector lead min. 0.93 in 2
Symbol Parameter Value Units
WIV
Working Inverse Voltage 175 V
IO
Average Rectified Current 200 mA
IF
DC Forward Current 600 mA
if
Recurrent Peak Forward Current 700 mA
if(surge)
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
1.0
2.0
A
A
TSTG
Storage Temperature Range -55 to +150
°C
TJ
Operating Junction Temperature 150
°C
Symbol Parameter
Max.
Units
MMBD1401A - 1405A*
PD
Power Dissipation
Derate above 25°C
2.8
mW/°C
350
mW
RθJA
Thermal Resistance, Junction to Ambient 357
°C/W
MMBD1401A / 1403A / 1404A / 1405A
Connection Diagram
3
1405A
1
12
3
A29
2
1
2
3
SOT-23
3
1
2
3
1
2
1
3
1401A 1403A
1404A
MMBD1401A A29 MMBD1404A A33
MARKING
2NC
MMBD1403A A32 MMBD1405A A34
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