参数资料
型号: MMBD1405A
厂商: Fairchild Semiconductor
文件页数: 2/5页
文件大小: 61K
描述: DIODE ULTRA FAST 175V SOT-23
产品变化通告: Mold Compound Change 12/Dec/2007
标准包装: 3,000
电压 - 在 If 时为正向 (Vf)(最大): 1.1V @ 200mA
电流 - 在 Vr 时反向漏电: 100nA @ 175V
电流 - 平均整流 (Io)(每个二极管): 200mA
电压 - (Vr)(最大): 175V
反向恢复时间(trr): 50ns
二极管类型: 标准
速度: 小信号 =< 200mA(Io),任意速度
二极管配置: 1 对共阳极
安装类型: 表面贴装
封装/外壳: TO-236-3,SC-59,SOT-23-3
供应商设备封装: SOT-23-3(TO-236)
包装: 带卷 (TR)
?2004 Fairchild Semiconductor Corporation
MMBD1401A / 1403A / 1404A / 1405A, Rev. A1
MMBD1401A / 1403A / 1404A / 1405A
Electrical Characteristics
TA=25°C unless otherwise noted
Typical Characteristics
Symbol Parameter Test Conditions Min. Max. Units
BV
Breakdown Voltage IR
= 100
μA 250 V
IR
Reverse Leakage VR
= 120V
VR
= 175V
40
100
nA
nA
VF
Forward Voltage
MMBD1401A/1403A
MMBD1404A/1405A
MMBD1401A/1403A
MMBD1404A/1405A
IF
= 10mA
IF
= 50mA
IF
= 200mA
IF
= 200mA
IF
= 300mA
IF
= 300mA
760
800
920
1.1
1.0
1.25
1.1
mV
mV
V
V
V
V
CO
Diode Capacitance VR
= 0, f = 1.0MHz 2.0 pF
TRR
Reverse Recovery Time IF
= I
R
= 30mA
50 nS
IRR
= 1.0mA, R
L
= 100
?
Figure 1. Reverse Voltage vs Reverse Current
BV - 1.0 to 100μA
IR - 55 to 205V
Figure 2. Reverse Current vs Reverse Voltage
Figure 3. Reverse Current vs Reverse Voltage
IR - 180 to 255V
Figure 4. Forward Voltage vs Forward Current
VF - 1.0 to 100μA
275
3 5 10 20 30 50 100
300
325
Ta= 25°C
I - REVERSE CURRENT (uA)R
V - REVERSE VOLTAGE (V)
R
V
R
GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten (10) Degree C increase in Temperature
055 75 95 115 135 155 175 195
10
20
30
40
50
V - REVERSE VOLTAGE (V)R
I - REVERSE CURRENT (nA)
R
Ta= 25°C
GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten Degree C increase in Temperature
20180 200 220 240
30
40
50
60
70
80
90
Ta= 25°C
100
V - REVERSE VOLTAGE (V)R
I - REVERSE CURRENT (nA)
R
255
I
R
1 2 3 5 10 20 30 50 100
250
300
350
400
450
I - FORWARD CURRENT (uA)F
V - FORWARD VOLTAGE (mV)
F
Ta= 25°C
V
F
相关PDF资料
PDF描述
MAX5056AASA+T IC MOSFET DRVR DUAL 8-SOIC
S332Z29Y5VN6UJ5R CAP CER 3300PF 1KV RADIAL
RCM06DCCD-S189 CONN EDGECARD 12POS R/A .156 SLD
S332Z29Y5VN63J5R CAP CER 3300PF 1KV RADIAL
R0.25S12-2415/H-R CONV DC/DC 0.25W 24V IN 15V OUT
相关代理商/技术参数
参数描述
MMBD142W 制造商:SEMTECH_ELEC 制造商全称:SEMTECH ELECTRONICS LTD. 功能描述:SILICON EPITAXIAL PLANAR SWITCHING DIODE
MMBD1501 功能描述:整流器 High Voltage General Purpose RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel
MMBD1501 制造商:Fairchild Semiconductor Corporation 功能描述:Small Signal Diode
MMBD1501_11 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:High Conductance Low Leakage Diode 350mW
MMBD1501_S00Z 功能描述:整流器 High Cond Lo Leakage RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel