- 您现在的位置：买卖IC网 > PDF目录98023 > MMBD3000T1 (ON SEMICONDUCTOR) 0.2 A, SILICON, SIGNAL DIODE PDF资料下载
参数资料
| 型号： | MMBD3000T1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 0.2 A, SILICON, SIGNAL DIODE |
| 封装： | SC-59, 3 PIN |
| 文件页数： | 1/32页 |
| 文件大小： | 299K |
| 代理商： | MMBD3000T1 |
当前第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页
3–46
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Switching Diode
Part of the GreenLine
Portfolio of devices with energy–conserving traits.
This switching diode has the following features:
Very Low Leakage (≤ 500 pA) promotes extended battery life by decreas-
ing energy waste
Offered in four Surface Mount package types
Available in 8 mm Tape and Reel in quantities of 3,000
Applications
ESD Protection
Reverse Polarity Protection
Steering Logic
Medium–Speed Switching
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Continuous Reverse Voltage
VR
30
Vdc
Peak Forward Current
IF
200
mAdc
Peak Forward Surge Current
IFM
(surge)
500
mA
DEVICE MARKING
MMBD1000LT1 = AY
MMBD2000T1 = DH
MMBD3000T1 = XP
MMSD1000T1 = 4K
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR-4 Board (1)
TA = 25°C
MMBD1000LT1, MMBD3000T1,
MMSD1000T1
MMBD2000T1
Derate above 25
°C MMBD1000LT1, MMBD3000T1,
MMSD1000T1
MMBD2000T1
PD
225
150
1.8
1.2
mW
mW/
°C
Thermal Resistance Junction to Ambient
MMBD1000LT1, MMBD3000T1,
MMSD1000T1
MMBD2000T1
R
θJA
556
833
°C/W
Junction and Storage Temperature
TJ, Tstg
– 55 to +150
°C
(1) Device mounted on a FR-4 glass epoxy printed circuit board using the minimum
recommended footprint.
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MMBD1000LT1
MMBD2000T1
MMBD3000T1
MMSD1000T1
CASE 318-08, STYLE 8
SOT-23 (TO-236AB)
Motorola Preferred Devices
1
2
3
CATHODE
1
ANODE
CASE 318D-04, STYLE 2
SC–59
CASE 425-04, STYLE 1
SOD–123
CASE 419-02, STYLE 2
SC–70/SOT–323
3
CATHODE
1
ANODE
3
CATHODE
2
ANODE
1
CATHODE
2
ANODE
MMBD1000LT1
MMBD2000T1
1
2
3
2
1
3
1
2
MMBD3000T1
MMSD1000T1
REV 1
相关PDF资料 |
PDF描述 |
|---|---|
| MMBD1000LT3 | 0.2 A, SILICON, SIGNAL DIODE, TO-236AB |
| MMBD3005T1 | 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE |
| MMBD352WT3 | SILICON, UHF BAND, MIXER DIODE |
| MMBF0201NLT3 | 300 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| MMBF0202PLT3 | 300 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBD3004 | 制造商:WEITRON 制造商全称:Weitron Technology 功能描述:Surface Mount Switching Diode |
| MMBD3004 RF | 功能描述:二极管 - 通用，功率，开关 350mW SMD Switching Diode RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
| MMBD3004A | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODE |
| MMBD3004A_ R2 _00001 | 制造商:PanJit Touch Screens 功能描述: |
| MMBD3004A_10 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODE |
发布紧急采购，3分钟左右您将得到回复。