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参数资料
| 型号： | MMBF0202PLT3 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 300 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 封装： | PLASTIC, CASE 318-08, 3 PIN |
| 文件页数： | 1/34页 |
| 文件大小： | 356K |
| 代理商： | MMBF0202PLT3 |
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Motorola Small–Signal Transistors, FETs and Diodes Device Data
Low rDS(on) Small-Signal MOSFETs
TMOS Single P-Channel
Field Effect Transistors
Part of the GreenLine
Portfolio of devices with energy–con-
serving traits.
These miniature surface mount MOSFETs utilize Motorola’s
High Cell Density, HDTMOS process. Low rDS(on) assures
minimal power loss and conserves energy, making this device
ideal for use in small power management circuitry. Typical
applications are dc–dc converters, power management in
portable and battery–powered products such as computers,
printers, PCMCIA cards, cellular and cordless telephones.
Low rDS(on) Provides Higher Efficiency and Extends Battery
Life
Miniature SOT–23 Surface Mount Package Saves Board Space
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
20
Vdc
Gate–to–Source Voltage — Continuous
VGS
± 20
Vdc
Drain Current — Continuous @ TA = 25°C
Drain Current — Continuous @ TA = 70°C
Drain Current — Pulsed Drain Current (tp ≤ 10 s)
ID
IDM
300
240
750
mAdc
Total Power Dissipation @ TA = 25°C(1)
PD
225
mW
Operating and Storage Temperature Range
TJ, Tstg
– 55 to 150
°C
Thermal Resistance — Junction–to–Ambient
R
θJA
625
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″ from case for 10 seconds
TL
260
°C
DEVICE MARKING
P3
(1) Mounted on G10/FR4 glass epoxy board using minimum recommended footprint.
ORDERING INFORMATION
Device
Reel Size
Tape Width
Quantity
MMBF0202PLT1
7
″
12 mm embossed tape
3000
MMBF0202PLT3
13
″
12 mm embossed tape
10,000
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
CASE 318–08, Style 21
SOT–23 (TO–236AB)
MMBF0202PLT1
P–CHANNEL
ENHANCEMENT–MODE
TMOS MOSFET
rDS(on) = 1.4 OHM
Motorola Preferred Device
1
2
3
3 DRAIN
1
GATE
2 SOURCE
(Replaces MMBF0202P/D)
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| MMBF2202PT3 | 300 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MMBF5484LT3 | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBF102 | 功能描述:射频JFET晶体管 N-CHANNEL RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:N-Channel 正向跨导 gFS（最大值/最小值）: 电阻汲极/源极 RDS（导通）: 漏源电压 VDS:40 V 闸/源截止电压:5 V 闸/源击穿电压:40 V 最大漏极/栅极电压:40 V 漏极电流（Vgs=0 时的 Idss）:25 mA to 75 mA 漏极连续电流: 功率耗散:250 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-23 封装:Reel |
| MMBF102LT1 | 制造商:Motorola Inc 功能描述: |
| MMBF1374T1 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MMBF170 | 功能描述:MOSFET N-Ch Enhance RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MMBF170 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SOT-23 |
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