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参数资料
| 型号： | MMBF2202PT3 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 300 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SC-70, 3 PIN |
| 文件页数： | 1/34页 |
| 文件大小： | 348K |
| 代理商： | MMBF2202PT3 |
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Motorola Small–Signal Transistors, FETs and Diodes Device Data
Low rDS(on) Small-Signal MOSFETs
TMOS Single P-Channel
Field Effect Transistors
Part of the GreenLine
Portfolio of devices with energy–con-
serving traits.
These miniature surface mount MOSFETs utilize Motorola’s
High Cell Density, HDTMOS process. Low rDS(on) assures
minimal power loss and conserves energy, making this device
ideal for use in small power management circuitry. Typical
applications are dc–dc converters, power management in
portable and battery–powered products such as computers,
printers, PCMCIA cards, cellular and cordless telephones.
Low rDS(on) Provides Higher Efficiency and Extends Battery
Life
Miniature SC–70/SOT–323 Surface Mount Package Saves
Board Space
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
20
Vdc
Gate–to–Source Voltage — Continuous
VGS
± 20
Vdc
Drain Current — Continuous @ TA = 25°C
Drain Current — Continuous @ TA = 70°C
Drain Current — Pulsed Drain Current (tp ≤ 10 s)
ID
IDM
300
240
750
mAdc
Total Power Dissipation @ TA = 25°C(1)
Derate above 25
°C
PD
150
1.2
mW
mW/
°C
Operating and Storage Temperature Range
TJ, Tstg
– 55 to 150
°C
Thermal Resistance — Junction–to–Ambient
R
θJA
833
°C/W
Maximum Lead Temperature for Soldering Purposes, for 10 seconds
TL
260
°C
DEVICE MARKING
P3
(1) Mounted on G10/FR4 glass epoxy board using minimum recommended footprint.
ORDERING INFORMATION
Device
Reel Size
Tape Width
Quantity
MMBF2202PT1
7
″
8 mm embossed tape
3000
MMBF2202PT3
13
″
8 mm embossed tape
10,000
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MMBF2202PT1
P–CHANNEL
ENHANCEMENT–MODE
TMOS MOSFET
rDS(on) = 2.2 OHM
Motorola Preferred Device
CASE 419–02, STYLE 7
SC–70/SOT–323
3 DRAIN
1
GATE
2 SOURCE
REV 1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBF4091 | 功能描述:JFET N-Channel Switch RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| MMBF4091 | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR 制造商:Fairchild Semiconductor Corporation 功能描述:N CHANNEL JFET, -40V, SOT-23 |
| MMBF4091_Q | 功能描述:JFET N-Channel Switch RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| MMBF4092 | 功能描述:JFET N-Channel Switch RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| MMBF4092_Q | 功能描述:JFET N-Channel Switch RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
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