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参数资料
| 型号： | MMBF170D87Z |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 封装： | TO-236AB, 3 PIN |
| 文件页数： | 1/14页 |
| 文件大小： | 1256K |
| 代理商： | MMBF170D87Z |
BS170
/
MMBF170
—
N-Channel
Enhance
m
e
n
tMode
Field
Effect
T
ransistor
2009 Fairchild Semiconductor Corporation
www.fairchildsemi.com
BS170 / MMBF170 Rev. E1
1
March 2009
BS170 / MMBF170
N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. These products have been
designed to minimize on-state resistance while provide
rugged, reliable, and fast switching performance. They can
be used in most applications requiring up to 500mA DC.
These products are particularly suited for low voltage, low
current applications such as small servo motor control,
power MOSFET gate drivers, and other switching
applications.
Absolute Maximum Ratings T
a = 25°C unless otherwise noted
Thermal Characteristics T
a = 25°C unless otherwise noted
Symbol
Parameter
BS170
MMBF170
Units
VDSS
Drain-Source Voltage
60
V
VDGR
Drain-Gate Voltage (RGS ≤ 1MΩ)60
V
VGSS
Gate-Source Voltage
± 20
V
ID
Drain Current - Continuous
500
mA
- Pulsed
1200
800
TJ, TSTG
Operating and Storage Temperature Range
- 55 to 150
°C
TL
Maximum Lead Temperature for Soldering
Purposes, 1/16" from Case for 10 Seconds
300
°C
Symbol
Parameter
BS170
MMBF170
Units
PD
Maximum Power Dissipation
Derate above 25
°C
830
6.6
300
2.4
mW
mW/
°C
RθJA
Thermal Resistance, Junction to Ambient
150
417
°C/W
G
S
D
G
S
TO - 92
SOT - 23
Features
■
High density cell design for low RDS(ON).
■
Voltage controlled small signal switch.
■
Rugged and reliable.
■
High saturation current capability.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBF170G-AE2-R | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:0.5A, 60V N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| MMBF170L-AE2-R | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:0.5A, 60V N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| MMBF170LT1 | 功能描述:MOSFET 20V 500mA N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MMBF170LT1_08 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 500 mA, 60 V N-Channel SOT-23 |
| MMBF170LT1G | 功能描述:MOSFET 60V 500mA N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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