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参数资料
| 型号： | MMBF170D87Z |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 封装： | TO-236AB, 3 PIN |
| 文件页数： | 7/14页 |
| 文件大小： | 1256K |
| 代理商： | MMBF170D87Z |
BS170
/
MMBF170
—
N-Channel
Enhance
m
e
n
tMode
Field
Effect
T
ransistor
2009 Fairchild Semiconductor Corporation
www.fairchildsemi.com
BS170 / MMBF170 Rev. E1
2
Electrical Characteristics T
a=25°C unless otherwise noted
Note:
1. Pulse Test: Pulse Width
≤ 300μs, Duty Cycle ≤ 2.0%.
Symbol
Parameter
Conditions
Type
Min.
Typ.
Max.
Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 100 μAAll
60
V
IDSS
Zero Gate Voltage Drain Current
VDS = 25 V, VGS = 0 V
All
0.5
μA
IGSSF
Gate - Body Leakage, Forward
VGS = 15V, VDS = 0 V
All
10
nA
On Characteristics (Notes 1)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 1 mA
All
0.8
2.1
3
V
RDS(ON)
Static Drain-Source On-Resistance VGS = 10 V, ID = 200 mA
All
1.2
5
Ω
gFS
Forward Transconductance
VDS = 10 V, ID = 200 mA
BS170
320
mS
VDS ≥ 2 VDS(on), ID = 200 mA MMBF170
320
Dynamic Characteristics
Ciss
Input Capacitance
VDS = 10 V, VGS = 0 V,
f = 1.0 MHz
All
24
40
pF
Coss
Output Capacitance
All
17
30
pF
Crss
Reverse Transfer Capacitance
All
7
10
pF
Switching Characteristics (Notes 1)
ton
Turn-On Time
VDD = 25 V, ID = 200 mA,
VGS = 10 V, RGEN = 25 Ω
BS170
10
ns
VDD = 25 V, ID = 500 mA,
VGS = 10 V, RGEN = 50 Ω
MMBF170
10
toff
Turn-Off Time
VDD = 25 V, ID = 200 mA,
VGS = 10 V, RGEN = 25 Ω
BS170
10
ns
VDD = 25 V, ID = 500 mA,
VGS = 10 V, RGEN = 50 Ω
MMBF170
10
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相关代理商/技术参数 |
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|---|---|
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| MMBF170LT1G | 功能描述:MOSFET 60V 500mA N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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