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参数资料
| 型号： | MMBD301M3T5G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/3页 |
| 文件大小： | 88K |
| 描述： | DIODE SCHOTTKY HOT 30V SOT723 |
| 产品变化通告： | Copper Wire Change 19/May/2010 |
| 标准包装： | 8,000 |
| 二极管类型： | 肖特基 - 单 |
| 电压 - 峰值反向(最大)： | 30V |
| 电容@ Vr, F： | 1.5pF @ 15V，1MHz |
| 功率耗散（最大）： | 200mW |
| 封装/外壳： | SOT-723 |
| 供应商设备封装： | SOT-723 |
| 包装： | 带卷 (TR) |
?
Semiconductor Components Industries, LLC, 2013
May, 2013 ?
Rev. 1
1
Publication Order Number:
MMBD301M3/D
MMBD301M3T5G
Silicon Hot-Carrier Diode
SCHOTTKY Barrier Diode
The MMBD301M3T5G device is a spin?off of our popular
SOT?23 three?leaded device. It is designed primarily for
high?efficiency UHF and VHF detector applications. It is readily
adaptable to many other fast switching RF and digital applications
and is housed in the SOT?723 surface mount package. This device is
ideal for low?power surface mount applications where board space is
at a premium.
Features
?
Extremely Low Minority Carrier Lifetime ?
15 ps (Typ)
?
Very Low Capacitance ?
1.5 pF (Max) @ V
R
= 15 V
?
Reduces Board Space
?
These Devices are Pb?Free and Halogen Free/BFR Free
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
VR
30
V
Forward Current (DC)
IF
200 (Max)
mA
Total Device Dissipation
@ TA
= 25
°C
Derate above 25°C
PF
200
2.0
mW
mW/°C
Operating Junction Temperature Range
TJ
?55 to +125
°C
Storage Temperature Range
Tstg
?55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ELECTRICAL CHARACTERISTICS (TA
= 25
°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage (IR
= 10
A)
V(BR)R
30
?
?
V
Total Capacitance (VR
= 15 V, f = 1.0 MHz) Figure 1
CT
?
0.9
1.5
pF
Reverse Leakage (VR
= 25 V) Figure 3
IR
?
13
200
nAdc
Forward Voltage (IF
= 1.0 mAdc) Figure 4
VF
?
0.38
0.45
Vdc
Forward Voltage (IF
= 10 mAdc) Figure 4
VF
?
0.52
0.6
Vdc
http://onsemi.com
30 VOLTS
SILICON HOT?CARRIER
DETECTOR AND SWITCHING
DIODES
Device Package Shipping?
ORDERING INFORMATION
MMBD301M3T5G SOT?723
(Pb?Free)
8000/Tape & Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
SOT?723
CASE 631AA
STYLE 2
AK M
AK = Specific Device Code
M = Date Code
MARKING
DIAGRAM
1
ANODE
3
CATHODE
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBD301-TP | 功能描述:肖特基二极管与整流器 Diode 30V RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MMBD301TS | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:SURFACE MOUNT SCHOTTKY DIODE |
| MMBD301TS_09 | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:SURFACE MOUNT SCHOTTKY DIODE |
| MMBD318 | 制造商:SECOS 制造商全称:SeCoS Halbleitertechnologie GmbH 功能描述:Surface Mount High Votlage Switching Diode |
| MMBD318_10 | 制造商:SECOS 制造商全称:SeCoS Halbleitertechnologie GmbH 功能描述:Surface Mount High Vitlage Switching Diode |
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