参数资料
型号: MMBD4148
厂商: MICROSEMI CORP
元件分类: 二极管(射频、小信号、开关、功率)
英文描述: 0.15 A, SILICON, SIGNAL DIODE
文件页数: 1/3页
文件大小: 128K
代理商: MMBD4148
21201 Itasca St.
Chatsworth, CA 91311
Phone: (818) 701-4933
Fax:
(818) 701-4939
MMBD4148
500mW 100 Volt
Silicon Epitaxial Diode
SOT-23
Suggested Solder
Pad Layout
Features
Low Current Leakage
Low Cost
Small Outline Surface Mount Package
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.110
.120
2.80
3.04
B
.083
.098
2.10
2.64
C
.047
.055
1.20
1.40
D
.035
.041
.89
1.03
E
.070
.081
1.78
2.05
F
.018
.024
.45
.60
G
.0005
.0039
.013
.100
H
.035
.044
.89
1.12
J
.003
.007
.085
.180
K
.015
.020
.37
.51
Maximum Ratings
Operating Temperature: -55
°C to +150°C
Storage Temperature: -55
°C to +150°C
Maximum Thermal Resistance; 556
°C/W Junction To Ambient
Electrical Characteristics @ 25°C Unless Otherwise Specified
Reverse Voltage
VR
75V
Peak Reverse
Voltage
VRM
100V
Average Rectified
Current
IO
150mA
Resistive Load
f > 50Hz
Power Dissipation
PTOT
500mW
Junction
Temperature
TJ
200
°C
Peak Forward Surge
Current
IFSM
500mA
8.3ms, half sine
Maximum
Instantaneous
Forward Voltage
VF
1.0V
IFM = 10mA;
TJ = 25
°C*
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
IR
25nA
50
A
VR=20Volts
TJ = 25
°C
TJ = 150
°C
Typical Junction
Capacitance
CJ
4pF
Measured at
1.0MHz, VR=4.0V
Reverse Recovery
Time
Trr
4nS
IF=10mA
VR = 6V
RL=100
*Pulse test: Pulse width 300
sec, Duty cycle 2%
A
B
C
D
E
F
G
H
J
.079
2.000
inches
mm
.031
.800
.035
.900
.037
.95
.037
.950
5 H
C
A
Pin Configuration
Top View
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MMBD4448HAQW-13 0.25 A, 80 V, 4 ELEMENT, SILICON, SIGNAL DIODE
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