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参数资料
| 型号： | MMBD4448HST-7 |
| 厂商： | DIODES INC |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 0.25 A, 80 V, 2 ELEMENT, SILICON, SIGNAL DIODE |
| 文件页数： | 1/2页 |
| 文件大小： | 66K |
| 代理商： | MMBD4448HST-7 |
DS30263 Rev. C-2
1 of 2
MMBD4448HT /HAT /HCT /HST
MMBD4448HT /HAT /HCT /HST
SURFACE MOUNT FAST SWITCHING DIODE
Case: SOT-523, Molded Plastic
Case Material - UL Flammability Rating
Classification 94V-0
Terminals: Solderable per MIL-STD-202,
Method 208
Polarity: See Diagram
Marking: See Diagram
Mechanical Data
A
B C
G
M
L
J
D
H
N
K
TOP VIEW
Features
Maximum Ratings @ TA = 25°C unless otherwise specified
Notes:
1. Device mounted on FR-4 PC board with recommended pad layout.
2. Short duration test pulse used to minimize self-heating effect.
Electrical Characteristics @ TA = 25°C unless otherwise specified
NEW
PRODUCT
MMBD4448HST Marking: AB
MMBD4448HCT Marking: A7
MMBD4448HAT Marking: A6
MMBD4448HT Marking: A3
Ultra-Small Surface Mount Package
Fast Switching Speed
For General Purpose Switching Applications
High Conductance
Characteristic
Symbol
Value
Unit
Non-Repetitive Peak Reverse Voltage
VRM
100
V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
80
V
RMS Reverse Voltage
VR(RMS)
57
V
Forward Continuous Current
IFM
500
mA
Average Rectified Output Current
IO
250
mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0
ms
@ t = 1.0s
IFSM
4.0
2.0
A
Power Dissipation (Note 1)
Pd
150
mW
Thermal Resistance Junction to Ambient (Note 1)
RqJA
833
°C/W
Operating and Storage Temperature Range
Tj ,TSTG
-65 to +150
°C
Characteristic
Symbol
Min
Max
Unit
Test Condition
Reverse Breakdown Voltage (Note 2)
V(BR)R
80
V
IR = 2.5
ma
Forward Voltage (Note 2)
VF
0.62
0.72
0.855
1.0
1.25
V
IF = 5.0mA
IF = 10mA
IF = 100mA
IF = 150mA
Leakage Current (Note 2)
IR
100
50
30
25
nA
mA
nA
VR = 70V
VR = 75V, Tj = 150
°C
VR = 25V, Tj = 150
°C
VR = 20V
Junction Capacitance
Cj
3.5
pF
VR = 6V, f = 1.0MHz
Reverse Recovery Time
trr
4.0
ns
VR = 6V, IF = 5mA
SOT-523
Dim
Min
Max
Typ
A
0.15
0.30
0.22
B
0.75
0.85
0.80
C
1.45
1.75
1.60
D
0.50
G
0.90
1.10
1.00
H
1.50
1.70
1.60
J
0.00
0.10
0.05
K
0.60
0.80
0.75
L
0.10
0.30
0.22
M
0.10
0.20
0.12
N
0.45
0.65
0.50
All Dimensions in mm
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBD4448HT | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:SURFACE MOUNT FAST SWITCHING DIODE |
| MMBD4448HT_09 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:SURFACE MOUNT FAST SWITCHING DIODE |
| MMBD4448HT_1 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:SURFACE MOUNT FAST SWITCHING DIODE |
| MMBD4448HT-7 | 功能描述:整流器 80V 150mW RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| MMBD4448HT-7-F | 功能描述:整流器 80V 150mW RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
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