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参数资料
| 型号： | MMBD4150T/R13 |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 0.25 A, 50 V, SILICON, SIGNAL DIODE |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件页数： | 1/3页 |
| 文件大小： | 170K |
| 代理商： | MMBD4150T/R13 |
PAGE . 1
April.1.2011-REV.00
MMBD4150
SURFACE MOUNT SWITCHING DIODES
VOLTAGE
50 Volts
300 mWatts
FEATURES
Very fast reverse recovery(TRR<2.0ns typical)
Low capacitance(4pF@0V typical)
Surface Mount Package ldeally Suited for Automatic lnsertion
In compliance with EU RoHS 2002/95/EC directives
MECHANICALDATA
Case : SOT-23 plastic case.
Terminals : Solderable per MIL-STD-750,Method 2026
Standard packaging : 8mm tape
Approx.Weight : 0.0003 ounce, 0.0084gram
Marking : A5
POWER
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
NOTE:
1. Mounted on P.C.B. with minimum pad layout.
2. From IF=IR=10mA,RL=100
Ω.
Ratings at 25
o
C ambient temperature unless otherwise specified. For capacitive load,derate current by 20%
PARAMETER
SYMBOL
Value
UNITS
Maximum Reverse Voltage
VR
50
V
Peak Reverse Voltage
VRRM
50
V
Maximum Average Forward Current
I F(AV)
250
mA
Non-repetitve Peak Forward Surge Current at t=1.0s
I FSM
1A
Power Dissipation (Note 1)
PTOT
300
mW
Maximum Reverse Current a t 50V
I R
100
nA
Maximum Forward Voltage at IF=200 mA
V F
1V
Maximum Re ve r s e Re c o ve r y Ti me (Note 2) ( F i g ure 1)
TRR
4.0
ns
Thermal Resistance, Junction to Ambient (Note 1)
RΘJA
417
oC/W
Operati ng Junc ti on and S torage Te mperatur e Ra ng e
TJ,TSTG
-55 to 150
oC
0.120(3.04)
0.110(2.80)
0.056(1.40)
0.047(1.20)
0.079(2.00)
0.070(1.80)
0.004(0.10)MAX.
0.020(0.50)
0.013(0.35)
0.044(1.10)
0.035(0.90)
0.006(
0.
1
5
)M
IN
.
0.008(0.20)
0.003(0.08)
SINGLE
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