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参数资料
| 型号： | MMBD4150T/R13 |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 0.25 A, 50 V, SILICON, SIGNAL DIODE |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件页数： | 2/3页 |
| 文件大小： | 170K |
| 代理商： | MMBD4150T/R13 |
PAGE . 2
April.1.2011-REV.00
NOTE:
1. A2.0k. variable resistor adjusred for forward current (I
F) to 10mA
2.Input pulse is adjusted to I
R(peak) is equal to 10mA
Figure1. REVERSE RECOVERYTIME EQUIVALENTTEST CIRCUIT
ELECTRICAL CHARACTERISTIC CURVES
MMBD4150
0.1
1
10
0.1
1
10
100
VR, Reverse Bias Voltage (V)
C
J,
J
unc
tion
Capac
itanc
e(
pF
)
0
50
100
150
200
250
300
350
0
25
50
75
100
125
150
TA,Ambient Temperature (°C)
P
D
,Power
Dis
si
pation
(
mW)
0.0001
0.001
0.01
0.1
1
10
20
40
60
80
100
I R
,Rev
er
se
Cur
rent
(
μ
A)
TJ = 150°C
TJ = 125°C
TJ = 75°C
TJ = 25°C
Percent of Rated Peak Reverse Voltage (%)
Fig.4 Typical Reverse Characteristics
Fig.2 Power Derating Curve
Fig.3 Typical Junction Capacitance
1
10
100
1000
0
0.2
0.4
0.6
0.8
1
1.2
VF, Forward Voltage (V)
TJ = 150°C
TJ = 125°C
TJ = 100°C
TJ = 25°C
I F
,F
or
w
ar
dCur
rent
(
mA)
Fig.5 Typical Forward Characteristics
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| MMBD4448 | 功能描述:整流器 Hi Conductance Fast RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
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