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参数资料
| 型号： | MMBD4448-13 |
| 厂商： | DIODES INC |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 0.25 A, 75 V, SILICON, SIGNAL DIODE |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 1/2页 |
| 文件大小： | 70K |
| 代理商： | MMBD4448-13 |
DS12011 Rev. 10 - 2
1 of 2
MMBD4448
www.diodes.com
Diodes Incorporated
Case: SOT-23
Case material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Also Available in Lead Free Plating (Matte Tin Finish
annealed over Alloy 42 leadframe). Please see Ordering
Information, Note 5, on Page 2
Polarity: See Diagram
Marking: KA3 (See Page 2)
Weight: 0.008 grams (approx.)
Mechanical Data
A
E
J
L
TOP VIEW
M
B
C
H
G
D
K
Features
Characteristic
Symbol
MMBD4448
Unit
Non-Repetitive Peak Reverse Voltage
VRM
100
V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
75
V
RMS Reverse Voltage
VR(RMS)
53
V
Forward Continuous Current (Note 1)
IFM
500
mA
Average Rectified Output Current (Note 1)
IO
250
mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0
ms
@ t = 1.0s
IFSM
4.0
2.0
A
Power Dissipation (Note 1)
Pd
350
mW
Thermal Resistance Junction to Ambient Air (Note 1)
RqJA
357
°C/W
Operating and Storage Temperature Range
Tj ,TSTG
-65 to +150
°C
Maximum Ratings @ TA = 25°C unless otherwise specified
Notes:
1. Part mounted on FR-4 board with recommended pad layout, which can be found on our website
2. Short duration test pulse used to minimize self-heating effect.
3. No purposefully added lead.
Characteristic
Symbol
Min
Max
Unit
Test Condition
Reverse Breakdown Voltage (Note 2)
V(BR)R
75
V
IR = 2.5
mA
Forward Voltage (Note 2)
VF
0.62
0.72
0.855
1.0
1.25
V
IF = 5.0mA
IF = 10mA
IF = 100mA
IF = 150mA
Reverse Current (Note 2)
IR
2.5
50
30
25
mA
nA
VR = 75V
VR = 75V, Tj = 150
°C
VR = 25V, Tj = 150
°C
VR = 20V
Total Capacitance
CT
4.0
pF
VR = 0, f = 1.0MHz
Reverse Recovery Time
trr
4.0
ns
IF = IR = 10mA,
Irr = 0.1 x IR,RL = 100
W
Electrical Characteristics @ TA = 25°C unless otherwise specified
Fast Switching Speed
Surface Mount Package Ideally Suited for Automatic Insertion
For General Purpose Switching Applications
High Conductance
Available in Lead Free/RoHS Compliant Version (Note 3)
SOT-23
Dim
Min
Max
A
0.37
0.51
B
1.20
1.40
C
2.30
2.50
D
0.89
1.03
E
0.45
0.60
G
1.78
2.05
H
2.80
3.00
J
0.013
0.10
K
0.903
1.10
L
0.45
0.61
M
0.085
0.180
a
0
°
8
°
All Dimensions in mm
MMBD4448
SURFACE MOUNT SWITCHING DIODE
SPICE MODEL: MMBD4448
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBD4448-7 | 功能描述:二极管 - 通用，功率，开关 75V 350mW RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
| MMBD44487F | 制造商:Diodes Incorporated 功能描述: |
| MMBD4448-7-F | 功能描述:二极管 - 通用，功率，开关 75V 350mW RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
| MMBD4448ADW | 制造商:TRSYS 制造商全称:Transys Electronics 功能描述:Plastic-Encapsulate Diode |
| MMBD4448AQW | 制造商:TRSYS 制造商全称:Transys Electronics 功能描述:Plastic-Encapsulate Diode |
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