- 您现在的位置：买卖IC网 > PDF目录48741 > MMBD701LT1 (MOTOROLA INC) SILICON, VHF-UHF BAND, MIXER DIODE, TO-236AB PDF资料下载
参数资料
| 型号： | MMBD701LT1 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 射频混频器 |
| 英文描述： | SILICON, VHF-UHF BAND, MIXER DIODE, TO-236AB |
| 文件页数： | 1/4页 |
| 文件大小： | 89K |
| 代理商： | MMBD701LT1 |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Silicon Hot-Carrier Diodes
Schottky Barrier Diodes
These devices are designed primarily for high–efficiency UHF and VHF detector
applications. They are readily adaptable to many other fast switching RF and digital
applications. They are supplied in an inexpensive plastic package for low–cost,
high–volume consumer and industrial/commercial requirements. They are also
available in a Surface Mount package.
Extremely Low Minority Carrier Lifetime – 15 ps (Typ)
Very Low Capacitance – 1.0 pF @ VR = 20 V
High Reverse Voltage – to 70 Volts
Low Reverse Leakage – 200 nA (Max)
MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)
MBD701
MMBD701LT1
Rating
Symbol
Value
Unit
Reverse Voltage
VR
70
Volts
Forward Power Dissipation
@ TA = 25°C
Derate above 25
°C
PF
280
2.8
200
2.0
mW
mW/
°C
Operating Junction
Temperature Range
TJ
– 55 to +125
°C
Storage Temperature Range
Tstg
– 55 to +150
°C
DEVICE MARKING
MMBD701LT1 = 5H
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage (IR = 10 Adc)
V(BR)R
70
—
Volts
Total Capacitance (VR = 20 V, f = 1.0 MHz) Figure 1
CT
—
0.5
1.0
pF
Reverse Leakage (VR = 35 V) Figure 3
IR
—
9.0
200
nAdc
Forward Voltage (IF = 1.0 mAdc) Figure 4
VF
—
0.42
0.5
Vdc
Forward Voltage (IF = 10 mAdc) Figure 4
VF
—
0.7
1.0
Vdc
NOTE: MMBD701LT1 is also available in bulk packaging. Use MMBD701L as the device title to order this device in bulk.
Thermal Clad is a registered trademark of the Berquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by MBD701/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MBD701
MMBD701LT1
Motorola Preferred Devices
CASE 182– 02, STYLE 1
(TO–226AC)
CASE 318 – 08, STYLE 8
SOT– 23 (TO – 236AB)
1
2
70 VOLTS
HIGH–VOLTAGE
SILICON HOT– CARRIER
DETECTOR AND SWITCHING
DIODES
2
CATHODE
1
ANODE
1
2
3
CATHODE
1
ANODE
Motorola, Inc. 1997
相关PDF资料 |
PDF描述 |
|---|---|
| MMBZ5233BD87Z | 6 V, 0.35 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| MMBZ5228BD87Z | 3.9 V, 0.35 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| MMBZ5232BD87Z | 5.6 V, 0.35 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| MMBZ5237BD87Z | 8.2 V, 0.35 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| MMBZ5241B | 11 V, 0.35 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBD701LT1G | 功能描述:肖特基二极管与整流器 70V 200mW Dual Common Anode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MMBD701LT3 | 功能描述:肖特基二极管与整流器 70V 200mW Dual RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MMBD701LT3G | 功能描述:DIODE SCHOTTKY 70V SOT-23 RoHS:是 类别:分离式半导体产品 >> RF 二极管 系列:- 标准包装:3,000 系列:- 二极管类型:PIN - 单 电压 - 峰值反向(最大):50V 电流 - 最大:50mA 电容@ Vr, F:0.4pF @ 50V，1MHz 电阻@ Vr, F:4.5 欧姆 @ 10mA，100MHz 功率耗散（最大）:100mW 封装/外壳:SC-70，SOT-323 供应商设备封装:3-MCP 包装:带卷 (TR) |
| MMBD717 | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:SURFACE MOUNT SCHOTTKY DIODES |
| MMBD717_09 | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:SURFACE MOUNT SCHOTTKY DIODES |
发布紧急采购，3分钟左右您将得到回复。