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参数资料
| 型号： | MMBD4448HTA |
| 厂商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 0.25 A, 80 V, 2 ELEMENT, SILICON, SIGNAL DIODE |
| 封装： | GREEN, PLASTIC PACKAGE-3 |
| 文件页数： | 1/4页 |
| 文件大小： | 174K |
| 代理商： | MMBD4448HTA |
MMBD4448HTA
SURFACE MOUNT
FAST SWITCHING DIODE
REVERSE VOLTAGE – 80 Volts
FORWARD CURRENT – 0.25 Ampere
FEATURES
Fast switching speed
Ideally suited for automatic insertion
For general purpose switching applications
MECHANICAL DATA
Case: SOT-523 Plastic
Case material: “Green” molding compound, UL
flammability classification 94V-0, (No Br. Sb. CI)
Moisture sensitivity: Level 1 per J-STD-020D
Lead free in RoHS 2002/95/EC compliant
SOT-523
SOT-523
Dim.
Min.
Max.
A
0.70
0.90
A1
0.00
0.10
b
0.25
0.325
c
0.10
0.20
D
1.50
1.70
E
1.45
1.75
E1
0.75
0.85
e
0.50 Typ.
e1
0.90
1.10
L
0.55 Ref.
Dimensions in millimeter
Maximum Ratings & Thermal Characteristics @ TA = 25℃ unless otherwise specified
Characteristic
Symbol
MMBD4448HTA
Units
Non-Repetitive Peak Reverse Voltage
VRM
100
V
Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
80
V
RMS Reverse Voltage
VR(RMS)
57
V
Forward Continuous Current
IFM
500
mA
Average Rectified Output Current
IO
250
mA
Repetitive Peak Forward Current
@t=1us
@t=1s
IFSM
4
1.5
A
Power Dissipation
PD
150
mW
Thermal Resistance Junction to Ambient
RΘJA
833
/W
℃
Operating Temperature Range
TJ
150
℃
Storage Temperature Range
TSTG
-65~+150
℃
Electrical Characteristics @ TA = 25℃ unless otherwise specified
Characteristic
Test Condition
Symbol
Min.
Typ.
Max.
Unit
Reverse Breakdown Voltage
IR = 100uA
VBR
80
--
V
Maximum Forward Voltage
IF = 5mA
IF = 10mA
IF = 100mA
IF = 150mA
VF
620
--
720
855
1000
1250
mV
Maximum DC Reverse Current
at Rated DC Blocking Voltage
VR = 70V
VR = 20V
IR
--
100
25
nA
Typical Diode Capacitance
VR =6V,f=1MHz
CD
--
3.5
pF
Reverse Recovery time
VR =6V, IF=5mA
trr
--
4
ns
REV. 1, Oct-2010, KSYR75
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBD4448HTA-7 | 功能描述:整流器 80V 150mW RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| MMBD4448HTA-7-F | 功能描述:整流器 80V 150mW RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| MMBD4448HTA-TP | 功能描述:二极管 - 通用，功率，开关 80V 500mA 3.5pF RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
| MMBD4448HTC | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:SURFACE MOUNT FAST SWITCHING DIODE |
| MMBD4448HTC-7 | 功能描述:整流器 150MW 80V RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
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