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参数资料
| 型号： | MMBD4448HTW |
| 厂商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 0.25 A, 80 V, 3 ELEMENT, SILICON, SIGNAL DIODE |
| 封装： | GREEN, PLASTIC PACKAGE-6 |
| 文件页数： | 1/4页 |
| 文件大小： | 180K |
| 代理商： | MMBD4448HTW |
MMBD4448HTW
SURFACE MOUNT
FAST SWITCHING DIODE
REVERSE VOLTAGE – 80 Volts
FORWARD CURRENT – 0.25 Ampere
FEATURES
Fast switching speed
Ideally suited for automatic insertion
For general purpose switching applications
MECHANICAL DATA
Case: SOT-363 Plastic
Case material: “Green” molding compound, UL
flammability classification 94V-0, (No Br. Sb. CI)
Moisture sensitivity: Level 1 per J-STD-020D
Lead free in RoHS 2002/95/EC compliant
SOT-363
SOT-363
Dim.
Min.
Max.
A
0.15
0.35
B
1.15
1.35
C
2.15
2.45
D
0.65 TYP.
E
0.40 REF.
H
2.00
2.20
J
0.00
0.10
K
0.90
1.10
L
0.525 REF.
M
0.08
0.15
Dimensions in
millimeter
Maximum Ratings & Thermal Characteristics @ TA = 25℃ unless otherwise specified
Characteristic
Symbol
MMBD4448HTW
Units
Non-Repetitive Peak Reverse Voltage
VRM
100
V
Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
80
V
RMS Reverse Voltage
VR(RMS)
57
V
Forward Continuous Current
IFM
500
mA
Average Rectified Output Current
IO
250
mA
Repetitive Peak Forward Current
@t=1us
@t=1s
IFSM
4
1.5
A
Power Dissipation
PD
200
mW
Thermal Resistance Junction to Ambient
RΘJA
625
/W
℃
Operating Temperature Range
TJ
150
℃
Storage Temperature Range
TSTG
-65~+150
℃
Electrical Characteristics @ TA = 25℃ unless otherwise specified
Characteristic
Test Condition
Symbol
Min.
Typ.
Max.
Unit
Reverse Breakdown Voltage
IR = 100uA
VBR
80
--
V
Maximum Forward Voltage
IF = 5mA
IF = 10mA
IF = 100mA
IF = 150mA
VF
620
--
720
855
1000
1250
mV
Maximum DC Reverse Current
at Rated DC Blocking Voltage
VR = 70V
VR = 20V
IR
--
100
25
nA
Typical Diode Capacitance
VR =6V,f=1MHz
CD
--
3.5
pF
Reverse Recovery time
VR =6V, IF=5mA
trr
--
4
ns
REV. 1, Oct-2010, KSYR78
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBD4448HTW-7 | 功能描述:整流器 80V 200mW RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| MMBD4448HTW7F | 制造商: 功能描述: 制造商:undefined 功能描述: |
| MMBD4448HTW-7-F | 功能描述:整流器 80V 200mW RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| MMBD4448HTWPT | 制造商:CHENMKO 制造商全称:Chenmko Enterprise Co. Ltd. 功能描述:SWITCHING DIODE ARRAY |
| MMBD4448HTWT | 功能描述:二极管 - 通用，功率，开关 500mA 80V RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
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