参数资料
型号: MMBD4448TWT/R13
元件分类: 二极管(射频、小信号、开关、功率)
英文描述: 0.15 A, 100 V, 3 ELEMENT, SILICON, SIGNAL DIODE
封装: ROHS COMPLIANT, PLASTIC PACKAGE-6
文件页数: 1/3页
文件大小: 135K
代理商: MMBD4448TWT/R13
PAGE . 1
REV.0.0-MAR.26.2009
MMBD4448TW
SURFACE MOUNT SWITCHING DIODES
VOLTAGE
100 Volts
200mWatts
FEATURES
Fast switching Speed
Electrically ldentical to Standerd JEDEC
High Conductance
Surface Mount Package ldeally Suited for Automatic lnsertion
In compliance with EU RoHS 2002/95/EC directives
MECHANICALDATA
Case: SOT-363 plastic case.
Terminals : Solderable per MIL-STD-750,Method 2026
Standard packaging: 8mm tape
Weight: approximately 0.006 gram
POWER
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TJ =25°C unless otherwise noted)
NOTE:
1. CJ at VR=0, f=1MHZ
2. From IF=10mA to IR=1mA, VR=6Volts, RL=100
R
E
T
E
M
A
R
A
P
L
O
B
M
Y
S
W
T
8
4
D
B
M
S
T
I
N
U
e
g
a
t
l
o
V
e
s
r
e
v
e
R
V R
5
7
V
e
g
a
t
l
o
V
e
s
r
e
v
e
R
k
a
e
P
V RM
0
1
V
e
g
a
t
l
o
V
S
M
R
V RMS
0
5
V
e
g
a
t
l
o
V
g
n
i
k
c
o
l
B
C
D
m
u
m
i
x
a
M
V DC
5
7
V
T
t
a
t
n
e
r
u
C
d
r
a
w
r
o
F
e
g
a
r
e
v
A
m
u
m
i
x
a
M
A
5
2
=
O C
I AV
0
5
1
A
m
s
u
0
.
1
,
t
n
e
r
u
C
e
g
r
u
S
d
r
a
w
r
o
F
k
a
e
P
I FS M
4
A
5
2
e
v
o
b
A
e
t
a
r
e
D
n
o
i
t
a
p
i
s
i
D
r
e
w
o
P
O C
P D
0
2
W
m
e
g
a
t
l
o
V
d
r
a
w
r
o
F
m
u
m
i
x
a
M
V F
A
5
0
.
0
/
2
7
.
0
A
1
.
0
/
0
.
1
V
C
D
d
e
t
a
R
t
a
t
n
e
r
u
C
e
s
r
e
v
e
R
C
D
m
u
m
i
x
a
M
T
e
g
a
t
l
o
V
g
n
i
k
c
o
l
B
J
5
2
=
O C
I R
V
5
7
@
5
.
2
A
)
1
e
t
o
N
(
e
c
n
a
t
i
c
a
p
a
C
n
o
i
t
c
n
u
J
C J
0
.
4
F
p
)
2
e
t
o
N
(
y
r
e
v
o
c
e
R
e
s
r
e
v
e
R
m
u
m
i
x
a
M
TRR
0
.
4
s
n
e
c
n
a
t
s
i
s
e
R
l
a
m
r
e
h
T
l
a
c
i
p
y
T
R
θJA
5
2
6
O
W
/
C
e
g
n
a
R
e
r
u
t
a
r
e
p
m
e
T
e
g
a
r
o
t
S
TJ
0
5
1
+
o
t
5
-
O C
0.
01
8(
0
.45
)
0.
00
6(
0
.15
)
0.010(0.25)
0.054(1.35)
0.045(1.15)
0.087(2.20)
0.074(1.90)
0.030(0.75)
0.021(0.55)
0.056(1.40)
0.047(1.20)
0.012(0.30)
0.005(0.15)
0.
04
0
(1.
00
)
0.
03
1
(0.
80
)
0.
04
4(
1
.1
0)
M
A
X
.
0
.08
7(
2
.2
0)
0
.07
8(
2
.0
0)
0.010(0.25)
0.003(0.08)
相关PDF资料
PDF描述
MMBD4448 0.15 A, SILICON, SIGNAL DIODE
MMBD6050WS 0.2 A, 80 V, SILICON, SIGNAL DIODE
MMBF0202PLT1G 300 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236
MMBF4119L99Z N-CHANNEL, Si, SMALL SIGNAL, JFET
MMBF4118L99Z N-CHANNEL, Si, SMALL SIGNAL, JFET
相关代理商/技术参数
参数描述
MMBD4448V 功能描述:二极管 - 通用,功率,开关 80V 150mW RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube
MMBD4448V_08 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:SURFACE MOUNT FAST SWITCHING DIODE
MMBD4448V_13 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:150mW Switching Diodes
MMBD4448V-7 功能描述:二极管 - 通用,功率,开关 80V 150mW RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube
MMBD4448VPT 制造商:CHENMKO 制造商全称:Chenmko Enterprise Co. Ltd. 功能描述:SWITCHING DIODE ARRAY