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| 型号： | MMBD5004S-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/4页 |
| 文件大小： | 83K |
| 描述： | DIODE ARRAY 350V 300MA SOT23-3 |
| 标准包装： | 3,000 |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 1.275V @ 200mA |
| 电流 - 在 Vr 时反向漏电： | 150nA @ 240V |
| 电流 - 平均整流 (Io)（每个二极管）： | 300mA（DC） |
| 电压 - (Vr)（最大）： | 350V |
| 反向恢复时间(trr)： | 50ns |
| 二极管类型： | 标准 |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 二极管配置： | 1 对串联 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3 |
| 包装： | 带卷 (TR) |
MMBD5004S
Document number: DS30832 Rev. 8 - 2
2 of 4
www.diodes.com
May 2011
? Diodes Incorporated
MMBD5004S
NEW PRODUCT
Maximum Ratings
@TA
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Repetitive Peak Reverse Voltage
VRRM
400 V
Working Peak Reverse Voltage
DC Blocking Voltage
VRWM
VR
350 V
RMS Reverse Voltage
VR(RMS)
247 V
Forward Continuous Current (Note 4)
IF
300 mA
Peak Repetitive Forward Current (Note 4)
IFRM
625 mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0μs
@ t = 1.0ms
IFSM
5
3
A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 4) (See figure 1)
PD
350 mW
Thermal Resistance Junction to Ambient Air (Note 4)
RθJA
357
°C/W
Operating and Storage Temperature Range
TJ , TSTG
-55 to +150
°C
Electrical Characteristics
@TA
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage (Note 5)
V(BR)R
400
?
?
V
IR
= 150
μA
Forward Voltage
VF
?
?
?
?
0.9
1.05
1.275
V
IF
= 20mA
IF
= 100mA
IF
= 200mA
Reverse Current (Note 5)
IR
?
?
?
150
5
nA
μA
VR
= 240V
VR
= 360V
Total Capacitance
CT
?
0.65 2.0 pF VR
= 0V, f = 1.0MHz
Reverse Recovery Time
trr
?
?
50 ns IF
= I
R
= 30mA,
Irr = 3.0mA, RL
= 100
Ω
Notes: 4. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com.
5. Short duration pulse test used to minimize self-heating effect.
400
T , AMBIENT TEMPERATURE (°C)A
Fig. 1 Power Derating Curve, Total Package
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N (mW)
D
200
100
300
0
500
0
30 60 90 120 150
I , INSTANTANEOUS FORWARD CURRENT ( A)
F
m
100
1
10
0.1
0 0.2 0.4 0.6 0.8 1.0
1,000
V , INSTANTANEOUS FORWARD VOLTAGE (V)F
Fig. 2 Typical Forward Characteristics, Per Element
1.2
T = 150 CJ
°
T = 1 CJ
25°
T = CJ
85°
T = 25CJ
°
T = 5CJ
-5
°
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