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| 型号： | MMBD6100LT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/3页 |
| 文件大小： | 121K |
| 描述： | DIODE SWITCH DUAL 70V SOT23 |
| 产品目录绘图： | Rectifier SOT-23, SOT-23S |
| 标准包装： | 10 |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 1.1V @ 100mA |
| 电流 - 在 Vr 时反向漏电： | 100nA @ 50V |
| 电流 - 平均整流 (Io)（每个二极管）： | 200mA（DC） |
| 电压 - (Vr)（最大）： | 70V |
| 反向恢复时间(trr)： | 4ns |
| 二极管类型： | 标准 |
| 速度： | 小信号 =< 200mA（Io），任意速度 |
| 二极管配置： | 1 对共阴极 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3（TO-236） |
| 包装： | 标准包装 |
| 产品目录页面： | 1569 (CN2011-ZH PDF) |
| 其它名称： | MMBD6100LT1GOSDKR |
?
Semiconductor Components Industries, LLC, 2009
August, 2009 ?
Rev. 3
1
Publication Order Number:
MMBD6100LT1/D
MMBD6100LT1G
Monolithic Dual
Switching Diode
Features
?
These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (EACH DIODE)
Rating
Symbol
Value
Unit
Reverse Voltage
VR
70
Vdc
Forward Current
IF
200
mAdc
Peak Forward Surge Current
IFM(surge)
500
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation, FR?5 Board
(Note 1)
TA
= 25
°C
Derate above 25°C
PD
225
1.8
mW
mW/°C
Thermal Resistance, Junction?to?Ambient
RJA
556
°C/W
Total Device Dissipation Alumina Substrate
(Note 2)
TA
= 25
°C
Derate above 25°C
PD
300
2.4
mW
mW/°C
Thermal Resistance, Junction?to?Ambient
RJA
417
°C/W
Junction and Storage Temperature Range
TJ, Tstg
?55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR?5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
ELECTRICAL CHARACTERISTICS (TA
= 25
°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I(BR)
= 100
Adc)
V(BR)
70
?
Vdc
Reverse Voltage Leakage Current
(VR
= 50 Vdc)
(For each individual diode while the
second diode is unbiased)
IR
?
0.1
Adc
Forward Voltage
(IF
= 1.0 mAdc)
(IF
= 100 mAdc)
VF
0.55
0.8
0.7
1.1
Vdc
Reverse Recovery Time
(IF
= I
R
= 10 mAdc, I
R(REC)
= 1.0 mAdc)
(Figure 1)
trr
?
4.0
ns
Capacitance
(VR
= 0 V)
C
?
2.5
pF
Device Package Shipping?
ORDERING INFORMATION
SOT?23
CASE 318
STYLE 9
3
CATHODE
2
ANODE
ANODE
1
1
5B M
5B = Specific Device Code
M = Date Code*
= Pb?Free Package
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
MMBD6100LT3G SOT?23
(Pb?Free)
10,000/Tape & Reel
3000/Tape & Reel
MMBD6100LT1G SOT?23
(Pb?Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
http://onsemi.com
(Note: Microdot may be in either location)
1
2
3
MARKING DIAGRAM
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| MMBD7000LT1G | DIODE SWITCH DUAL 100V SOT23 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBD6100LT1G | 制造商:ON Semiconductor 功能描述:Small Signal Diode |
| MMBD6100LT1G_09 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Monolithic Dual Switching Diode |
| MMBD6100LT3 | 功能描述:二极管 - 通用，功率，开关 70V 200mA RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
| MMBD6100LT3G | 功能描述:二极管 - 通用，功率，开关 70V 200mA RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
| MMBD6100-T1 | 制造商:WTE 制造商全称:Won-Top Electronics 功能描述:SURFACE MOUNT FAST SWITCHING DIODE |
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