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参数资料
| 型号： | MMBD6050LT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/3页 |
| 文件大小： | 85K |
| 描述： | DIODE SWITCH 70V SOT23 |
| 产品目录绘图： | Rectifier SOT-23, SOT-23S |
| 标准包装： | 10 |
| 二极管类型： | 标准 |
| 电压 - (Vr)（最大）： | 70V |
| 电流 - 平均整流 (Io)： | 200mA（DC） |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 1.1V @ 100mA |
| 速度： | 小信号 =< 200mA（Io），任意速度 |
| 反向恢复时间(trr)： | 4ns |
| 电流 - 在 Vr 时反向漏电： | 100nA @ 50V |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3（TO-236） |
| 包装： | 标准包装 |
| 产品目录页面： | 1569 (CN2011-ZH PDF) |
| 其它名称： | MMBD6050LT1GOSDKR |
?
Semiconductor Components Industries, LLC, 2011
March, 2011 ?
Rev. 6
1
Publication Order Number:
MMBD6050LT1/D
MMBD6050LT1G
Switching Diode
Features
?
These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
VR
70
Vdc
Forward Current
IF
200
mAdc
Peak Forward Surge Current
IFM(surge)
500
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR?5 Board,
(Note 1) TA
= 25
°C
Derate above 25°C
PD
225
1.8
mW
mW/°C
Thermal Resistance, Junction?to?Ambient
RJA
556
°C/W
Total Device Dissipation Alumina
Substrate, (Note 2) TA
= 25
°C
Derate above 25°C
PD
300
2.4
mW
mW/°C
Thermal Resistance, Junction?to?Ambient
RJA
417
°C/W
Junction and Storage Temperature
TJ, Tstg
?55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR?5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
ELECTRICAL CHARACTERISTICS (TA
= 25
°C unless otherwise noted)
Rating
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I(BR)
= 100
Adc)
VR
70
?
Vdc
Reverse Voltage Leakage Current
(VR
= 50 Vdc)
IR
?
0.1
Adc
Forward Voltage
(IF
= 1.0 mAdc)
(IF
= 100 mAdc)
VF
0.55
0.85
0.7
1.1
Vdc
Reverse Recovery Time (Figure 1)
(IF
= I
R
= 10 mAdc, I
R(REC)
= 1.0 mAdc)
tRR
?
4.0
ns
Capacitance
(VR
= 0 V)
CD
?
2.5
pF
http://onsemi.com
SOT?23 (TO?236)
CASE 318
STYLE 8
Device Package Shipping?
ORDERING INFORMATION
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MMBD6050LT1G SOT?23
(Pb?Free)
3,000 / Tape & Reel
1
2
3
MMBD6050LT3G SOT?23
(Pb?Free)
10,000/Tape & Reel
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1
5A M
5A = Device Code
M = Date Code*
= Pb?Free Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
3
CATHODE
1
ANODE
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBD6050LT3 | 功能描述:二极管 - 通用，功率，开关 70V 200mA RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
| MMBD6050LT3G | 功能描述:二极管 - 通用，功率，开关 70V 200mA RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
| MMBD6050-T1 | 制造商:WTE 制造商全称:Won-Top Electronics 功能描述:SURFACE MOUNT FAST SWITCHING DIODE |
| MMBD6050-V | 制造商:Vishay Semiconductors 功能描述:Diode, Small Signal; 200 mA; 70 V (Min.) @ 25 degC(Reverse); 1.1 V (Max.); SOT-2 |
| MMBD6050-V_12 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Small Signal Switching Diode |
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