参数资料
型号: MMBD6050T/R7
元件分类: 二极管(射频、小信号、开关、功率)
英文描述: 0.2 A, 80 V, SILICON, SIGNAL DIODE
封装: ROHS COMPLIANT, PLASTIC PACKAGE-3
文件页数: 4/4页
文件大小: 184K
代理商: MMBD6050T/R7
PAGE . 4
REV.0.1-FEB.10.2009
MOUNTING PAD LAYOUT
Packing information
T/R - 12K per 13" plastic Reel
T/R - 3K per 7” plastic Reel
ORDER INFORMATION
LEGAL STATEMENT
Copyright PanJit International, Inc 2009
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
MMBD6050
相关PDF资料
PDF描述
MMBD6050 0.2 A, 80 V, SILICON, SIGNAL DIODE
MMBD6100T/R7 0.2 A, 80 V, 2 ELEMENT, SILICON, SIGNAL DIODE
MMBD7000 0.15 A, 75 V, 2 ELEMENT, SILICON, SIGNAL DIODE
MMBD701T/R7 0.25 A, 70 V, SILICON, SIGNAL DIODE
MMBF0202PLT3 300 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
相关代理商/技术参数
参数描述
MMBD6050-V 制造商:Vishay Semiconductors 功能描述:Diode, Small Signal; 200 mA; 70 V (Min.) @ 25 degC(Reverse); 1.1 V (Max.); SOT-2
MMBD6050-V_12 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Small Signal Switching Diode
MMBD6050-V-G-08 制造商:Vishay Semiconductors 功能描述:SWITCHING DIODE GENPURP SOT23-E3-G
MMBD6050-V-G-18 制造商:Vishay Semiconductors 功能描述:SWITCHING DIODE GENPURP SOT23-E3-G
MMBD6050-V-GS08 功能描述:二极管 - 通用,功率,开关 70 Volt 200mA 4ns 500mA IFSM RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube