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参数资料
| 型号： | MMBD7000LT3G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/4页 |
| 文件大小： | 127K |
| 描述： | DIODE SWITCH DUAL 100V SOT-23 |
| 产品变化通告： | Wire Change 08/May/2007 |
| 标准包装： | 1 |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 1.1V @ 100mA |
| 电流 - 在 Vr 时反向漏电： | 3µA @ 100V |
| 电流 - 平均整流 (Io)（每个二极管）： | 200mA（DC） |
| 电压 - (Vr)（最大）： | 100V |
| 反向恢复时间(trr)： | 4ns |
| 二极管类型： | 标准 |
| 速度： | 小信号 =< 200mA（Io），任意速度 |
| 二极管配置： | 1 对串联 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3（TO-236） |
| 包装： | 标准包装 |
| 其它名称： | MMBD7000LT3GOSDKR |
?
Semiconductor Components Industries, LLC, 2011
November, 2011 ?
Rev. 6
1
Publication Order Number:
MMBD7000LT1/D
MMBD7000LT1G,
SMMBD7000LT1G,
MMBD7000LT3G,
SMMBD7000LT3G
Dual Switching Diode
Features
?
AEC?Q101 Qualified and PPAP Capable
?
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
?
These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS (EACH DIODE)
Rating
Symbol
Value
Unit
Reverse Voltage
VR
100
Vdc
Forward Current
IF
200
mAdc
Peak Forward Surge Current
IFM(surge)
500
mAdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR?5 Board
(Note 1)TA
= 25
?C
Derate above 25?C
PD
225
1.8
mW
mW/?C
Thermal Resistance, Junction to
Ambient
RJA
556
?C/W
Total Device Dissipation
Alumina Substrate, (Note 2)
TA
= 25
?C
Derate above 25?C
PD
300
2.4
mW
mW/?C
Thermal Resistance,
Junction?to?Ambient
RJA
417
?C/W
Junction and Storage Temperature
TJ, Tstg
?55 to +150
?C
1. FR?5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
*For additional information on our Pb?Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
MARKING DIAGRAM
SOT?23 (TO?236)
CASE 318
STYLE 11
Device Package Shipping?
ORDERING INFORMATION
MMBD7000LT1G SOT?23
(Pb?Free)
3,000 /
Tape & Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1
ANODE
3
CATHODE/ANODE
2
CATHODE
MMBD7000LT3G SOT?23
(Pb?Free)
10,000 /
Tape & Reel
1
M5C M
M5C = Specific Device Code
M = Date Code*
= Pb?Free Package
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
(Note: Microdot may be in either location)
SMMBD7000LT1G SOT?23
(Pb?Free)
3,000 /
Tape & Reel
SMMBD7000LT3G SOT?23
(Pb?Free)
10,000 /
Tape & Reel
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相关代理商/技术参数 |
参数描述 |
|---|---|
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| MMBD7000-TP | 功能描述:二极管 - 通用，功率，开关 100V RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
| MMBD7000-V | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Small Signal Switching Diode, Dual |
| MMBD7000-V_12 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Small Signal Switching Diode, Dual |
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