参数资料
型号: MMBD701LT1G
厂商: ON Semiconductor
文件页数: 1/5页
文件大小: 132K
描述: DIODE SCHOTTKY 200MW 70V SOT23
产品变化通告: Possible Adhesion Issue 11/July/2008
Wire Change 08/Jun/2009
产品目录绘图: Rectifier SOT-23, SOT-23S
标准包装: 1
二极管类型: 肖特基 - 单
电压 - 峰值反向(最大): 70V
电容@ Vr, F: 1pF @ 20V,1MHz
功率耗散(最大): 200mW
封装/外壳: TO-236-3,SC-59,SOT-23-3
供应商设备封装: SOT-23-3(TO-236)
包装: 标准包装
其它名称: MMBD701LT1GOSDKR
?
Semiconductor Components Industries, LLC, 2011
November, 2011 ?
Rev. 6
1
Publication Order Number:
MBD701/D
MBD701,
MMBD701L,
SMMBD701L
Preferred Device
Silicon Hot-Carrier Diodes
Schottky Barrier Diodes
These devices are designed primarily for high?efficiency UHF and
VHF detector applications. They are readily adaptable to many other
fast switching RF and digital applications. They are supplied in an
inexpensive plastic package for low?cost, high?volume consumer
and industrial/commercial requirements. They are also available in a
Surface Mount package.
Features
?
Extremely Low Minority Carrier Lifetime ?
15 ps (Typ)
?
Very Low Capacitance ?
1.0 pF @ V
R
= 20 V
?
High Reverse Voltage ?
to 70 V
?
Low Reverse Leakage ?
200 nA (Max)
?
AEC Qualified and PPAP Capable
?
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
?
Pb?Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
VR
70
V
Forward Power Dissipation
@ TA
= 25
?C
MBD701
MMBD701L, SMMBD701L
Derate above 25?C
MBD701
MMBD701L, SMMBD701L
PF
280
200
2.8
2.0
mW
mW/?C
Operating Junction Temperature
Range
TJ
?55 to +125
?C
Storage Temperature Range
Tstg
?55 to +150
?C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb?Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
http://onsemi.com
SOT?23 (TO?236)
CASE 318
STYLE 8
Preferred
devices are recommended choices for future use
and best overall value.
*Date Code orientation and/or overbar may vary
depending upon manufacturing location.
1
5H M
A = Assembly Location
Y = Year
WW = Work Week
5H = Device Code (SOT?23)
M = Date Code*
= Pb?Free Package
(Note: Microdot may be in either location)
MARKING DIAGRAMS
3
CATHODE
1
ANODE
2
CATHODE
1
ANODE
TO?92 2?Lead
CASE 182
STYLE 1
MBD
701
AYWW
SOT?23
TO?92
SOT?23
TO?92
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
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