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参数资料
| 型号： | MMBF0201NLT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 20V 300MA SOT-23 |
| 产品变化通告： | Wire Change for SOT23 Pkg 26/May/2009 |
| 产品目录绘图： | MOSFET SOT-23-3 Pkg |
| 标准包装： | 10 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 300mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1 欧姆 @ 300mA，10V |
| Id 时的 Vgs(th)（最大）： | 2.4V @ 250µA |
| 输入电容 (Ciss) @ Vds： | 45pF @ 5V |
| 功率 - 最大： | 225mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3（TO-236） |
| 包装： | 标准包装 |
| 产品目录页面： | 1558 (CN2011-ZH PDF) |
| 其它名称： | MMBF0201NLT1GOSDKR |
MMBF0201NL,
MVMBF0201NL
Power MOSFET
300 mAmps, 20 Volts
N ? Channel SOT ? 23
These miniature surface mount MOSFETs low R DS(on) assure
minimal power loss and conserve energy, making these devices ideal
for use in small power management circuitry. Typical applications are
d c ? d c c o n v e r t e r s , p o w e r m a n a g e m e n t i n p o r t a b l e a n d
battery ? powered products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
Features
? Low R DS(on) Provides Higher Efficiency and Extends Battery Life
? Miniature SOT ? 23 Surface Mount Package Saves Board Space
? MVMBF Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC ? Q101
http://onsemi.com
300 mAMPS ? 20 VOLTS
R DS(on) = 1 W
N ? Channel
3
1
?
Qualified and PPAP Capable*
These Devices are Pb ? Free and are RoHS Compliant
2
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Rating Symbol Value
Unit
MARKING DIAGRAM
AND PIN ASSIGNMENT
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage ? Continuous
Drain Current
? Continuous @ T A = 25 ° C
? Continuous @ T A = 70 ° C
? Pulsed Drain Current (t p ≤ 10 m s)
Total Power Dissipation @ T A = 25 ° C
V DSS
V GS
I D
I D
I DM
P D
20
± 20
300
240
750
225
Vdc
Vdc
mAdc
mW
1
2
3
SOT ? 23
CASE 318
STYLE 21
3
Drain
N1 M G
G
1 2
Gate Source
Operating and Storage Temperature Range
T J , T stg
? 55 to 150
° C
Thermal Resistance, Junction ? to ? Ambient
Maximum Lead Temperature for Soldering
Purposes, 1/8 ″ from case for 10 seconds
R q JA
T L
556
260
° C/W
° C
N1
M
G
= Specific Device Code
= Date Code*
= Pb ? Free Package
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
MMBF0201NLT1G
MVMBF0201NLT1G*
Package
SOT ? 23
(Pb ? Free)
SOT ? 23
(Pb ? Free)
Shipping ?
3000 / Tape &
Reel
3000 / Tape &
Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2013
August, 2013 ? Rev. 5
1
Publication Order Number:
MMBF0201NLT1/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBF0201NLT1G | 制造商:ON Semiconductor 功能描述:MOSFET 制造商:ON Semiconductor 功能描述:N CHANNEL MOSFET, 20V, 300mA SOT-23 |
| MMBF0201NLT1G-CUT TAPE | 制造商:ON 功能描述:MMBF Series N-Channel 20 V 1 Ohm 225 mW Surface Mount Power MOSFET - SOT-23 |
| MMBF0202PLT1 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 300 mAmps, 20 Volts |
| MMBF102 | 功能描述:射频JFET晶体管 N-CHANNEL RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:N-Channel 正向跨导 gFS（最大值/最小值）: 电阻汲极/源极 RDS（导通）: 漏源电压 VDS:40 V 闸/源截止电压:5 V 闸/源击穿电压:40 V 最大漏极/栅极电压:40 V 漏极电流（Vgs=0 时的 Idss）:25 mA to 75 mA 漏极连续电流: 功率耗散:250 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-23 封装:Reel |
| MMBF102LT1 | 制造商:Motorola Inc 功能描述: |
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