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参数资料
| 型号： | MMBF0202PLT3 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 300 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 文件页数： | 3/6页 |
| 文件大小： | 0K |
| 代理商： | MMBF0202PLT3 |
MMBF0202PLT1
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
ON–RESIST
ANCE
(OHMS)
0
2
4
8
0
0.6
0.8
1.0
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. Transfer Characteristics
I D
,DRAIN
CURRENT
(AMPS)
0
1
2
3
4
0
0.6
0.8
1.0
I D
,DRAIN
CURRENT
(AMPS)
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. On–Region Characteristics
0
100
200
500
0
1
3
4
5
0
–5
–10
–20
0
2
3
4
5
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 4. On–Resistance versus
Gate–to–Source Voltage
0
10
12
14
16
–50
25
100
150
0.80
1.20
Qg, TOTAL GATE CHARGE (pC)
Figure 5. Gate Charge
TEMPERATURE (
°C)
Figure 6. Threshold Voltage Variance
Over Temperature
0.4
2
300
400
–15
0
230
690
2270
0.2
125
°C
25
°C
TC = – 55°C
0.2
5 V
VGS = 10, 9, 8, 7, 6 V
VGS = 4.5 V
VGS = 10 V
1
V
GS
,GA
TE–T
O–SOURCE
VOL
TAGE
(VOL
TS)
2
4
6
8
3500
VDS = 16 V
V
GS(th)
,NORMALIZED
ID = 250 A
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0
50
75
125
6
4 V
3 V
200 mA
50 mA
VDS = 10 V
ID = 200 mA
2160
590
–25
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相关代理商/技术参数 |
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|---|---|
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| MMBF170 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SOT-23 |
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