参数资料
型号: MMBF0202PLT3
厂商: MOTOROLA INC
元件分类: 小信号晶体管
英文描述: 300 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
文件页数: 4/6页
文件大小: 0K
代理商: MMBF0202PLT3
MMBF0202PLT1
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
SOURCE
CURRENT
(AMPS)
–50
–25
0
25
50
150
0.80
1.10
1.20
1.30
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. On–Resistance versus
Junction Temperature
0
5
10
15
20
0
60
100
140
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 8. Capacitance
0
1
2
4.5
0.001
0.1
1.0
10
SOURCE–TO–DRAIN FORWARD VOLTAGE (VOLTS)
Figure 9. Source–to–Drain Forward Voltage
versus Continuous Current (IS)
75
1.00
40
0.01
3
4
0.95
20
R
DS(on)
,NORMALIZED
(OHMS)
0.85
100
125
VGS = 10 V @ 200 mA
VGS = 4.5 V @ 50 mA
C,
CAP
ACIT
ANCE
(pF)
Ciss
Coss
Crss
TJ = 150°C
25
°C
– 55
°C
1.25
1.15
1.05
0.90
120
80
相关PDF资料
PDF描述
MMBF170-13 500 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
MMBF170L99Z 500 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
MMBF4119 N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB
MMBF4118 N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB
PN4117/J05Z N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92
相关代理商/技术参数
参数描述
MMBF102 功能描述:射频JFET晶体管 N-CHANNEL RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:N-Channel 正向跨导 gFS(最大值/最小值): 电阻汲极/源极 RDS(导通): 漏源电压 VDS:40 V 闸/源截止电压:5 V 闸/源击穿电压:40 V 最大漏极/栅极电压:40 V 漏极电流(Vgs=0 时的 Idss):25 mA to 75 mA 漏极连续电流: 功率耗散:250 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-23 封装:Reel
MMBF102LT1 制造商:Motorola Inc 功能描述:
MMBF1374T1 制造商:Rochester Electronics LLC 功能描述:- Bulk
MMBF170 功能描述:MOSFET N-Ch Enhance RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
MMBF170 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SOT-23