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参数资料
| 型号： | MMBF170-13 |
| 厂商： | DIODES INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 2/3页 |
| 文件大小： | 0K |
| 代理商： | MMBF170-13 |
DS30104 Rev. 6 - 2
2 of 3
MMBF170
www.diodes.com
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 3)
Drain-Source Breakdown Voltage
BVDSS
60
70
V
VGS = 0V, ID = 100
mA
Zero Gate Voltage Drain Current
IDSS
1.0
A
VDS = 60V, VGS = 0V
Gate-Body Leakage
IGSS
±10
nA
VGS =
±15V, VDS = 0V
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
VGS(th)
0.8
2.1
3.0
V
VDS =VGS, ID = 250
mA
Static Drain-Source On-Resistance
RDS (ON)
5.0
W
VGS = 10V, ID = 200mA
Forward Transconductance
gFS
80
mS
VDS =10V, ID = 0.2A
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
22
40
pF
VDS = 10V, VGS = 0V
f = 1.0MHz
Output Capacitance
Coss
11
30
pF
Reverse Transfer Capacitance
Crss
2.0
5.0
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
10
ns
VDD = 25V, ID = 0.5A,
VGS = 10V, RGEN = 50
W
Turn-Off Delay Time
tD(OFF)
10
ns
Electrical Characteristics
@ TA = 25
°C unless otherwise specified
Ordering Information (Note 4)
Device
Packaging
Shipping
MMBF170-7
SOT-23
3000/Tape & Reel
Notes:
3.
Short duration test pulse used to minimize self-heating effect.
Marking Information
K6Z
YM
K6Z = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
Date Code Key
Year
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
2008
2009
Code
JK
L
M
N
P
R
ST
U
V
W
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
12
3
4
5
6
7
89
O
N
D
Notes:
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
5.
For Lead Free/RoHS Compliant Version part number, please add "-F" suffix to the part number above. Example: MMBF170-7-F.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBF170-7 | 功能描述:MOSFET 60V 225mW RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MMBF170-7-F | 功能描述:MOSFET 60V 225mW RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MMBF170-7-F-31 | 制造商:DIODES 功能描述:N-CHANNEL MOSFET / SOT-23 |
| MMBF170G-AE2-R | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:0.5A, 60V N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| MMBF170L-AE2-R | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:0.5A, 60V N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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