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参数资料
| 型号： | MMBF170-13 |
| 厂商： | DIODES INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 3/3页 |
| 文件大小： | 0K |
| 代理商： | MMBF170-13 |
DS30104 Rev. 6 - 2
3 of 3
MMBF170
www.diodes.com
0
0.2
0.4
0.6
0.8
1.0
01
2
3
4
5
V
, DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 1 On-Region Characteristics
V = 10V
GS
9.0V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
2.1V
5.5V
10V
2.1V
5.0V
I
,DRAIN-SOURCE
CURRENT
(A)
D
0
1
2
3
4
5
0
0.2
R
,NORMALIZED
DS(ON)
DRAIN-SOURCE
ON-RESIST
ANCE
I , DRAIN CURRENT (A)
D
Fig. 2 On-Resistance vs Drain Current
V
= 5.0V
GS
T = 25°C
j
V
= 10V
GS
6
7
0.4
0.6
0.8
1.0
0
V , GATE TO SOURCE VOLTAGE (V)
GS
Fig. 4 On-Resistance vs. Gate-Source Voltage
I = 50mA
D
I = 500mA
D
1
2
3
4
5
6
02
4
6
8
10
12
14
16
18
R
,NORMALIZED
DS(ON)
DRAIN-SOURCE
O
N-RESIST
ANCE
0
0.5
1.0
1.5
2.0
-55
-30
-5
20
45
70
95
120 145
R,
N
O
RMALIZED
DS(ON)
DRAIN-SOURCE
ON-RESIST
ANCE
T , JUNCTION TEMPERATURE (°C)
j
Fig. 3 On-Resistance vs Junction Temperature
V
= 10V, I = 0.5A
GS
D
V
= 5.0V, I = 0.05A
GS
D
0
50
100
25
50
75
100 125
150 175 200
P
,POWER
D
ISSIP
A
TION
(mW)
D
T , AMBIENT TEMPERATURE (°C)
A
Fig. 5, Max Power Dissipation vs
Ambient Temperature
150
200
250
300
350
0
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBF170-7 | 功能描述:MOSFET 60V 225mW RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MMBF170-7-F | 功能描述:MOSFET 60V 225mW RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MMBF170-7-F-31 | 制造商:DIODES 功能描述:N-CHANNEL MOSFET / SOT-23 |
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| MMBF170L-AE2-R | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:0.5A, 60V N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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