参数资料
型号: MMBF4118L99Z
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: 小信号晶体管
英文描述: N-CHANNEL, Si, SMALL SIGNAL, JFET
文件页数: 2/5页
文件大小: 128K
代理商: MMBF4118L99Z
5
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
ON CHARACTERISTICS
IDSS
Zero-Gate Voltage Drain Current*
VDS = 10 V, VGS = 0
4117
4118
4119
30
80
200
90
240
600
A
SMALL-SIGNAL CHARACTERISTICS
*Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 1.0%
V(BR)GSS
Gate-Source Breakdown Voltage
IG = - 1.0
A, VDS = 0
- 40
V
IGSS
Gate Reverse Current
VGS = - 20 V, VDS = 0
VGS = - 20 V, VDS = 0, TA = 150
°C
- 10
- 25
pA
nA
VGS(off)
Gate-Source Cutoff Voltage
VDS = - 10 V, ID = 1.0 nA
4117
4118
4119
- 0.6
- 1.0
- 2.0
- 1.8
- 3.0
- 6.0
V
gfs
Common-Source Forward
Transconductance
VDS = 10 V VGS = 0, f= 1.0 kHz
4117
4118
4119
70
80
100
210
250
330
mhos
goss
Common-Source Output
Conductance
VDS = 10 V VGS = 0, f= 1.0 kHz
4117
4118
4119
3.0
5.0
10
mhos
Re(yfs)
Common-Source Forwad
Transconductance
VDS = 10 V, VGS = 0, f= 30 MHz
4117
4118
4119
60
70
90
mhos
Ciss
Input Capacitance
VDS = 10 V, VGS = 0, f= 1.0 kHz
3.0
pF
Crss
Reverse Transfer Capacitance
VDS = 10 V, VGS = 0, f= 1.0 MHz,
1.5
pF
PN41
17
/
41
18
/
41
19
/
MMBF41
17
/
41
18
/
41
19
N-Channel Switch
(continued)
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