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参数资料
| 型号： | MMBF4393LT3 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 30 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB |
| 封装： | CASE 318-08, 3 PIN |
| 文件页数： | 4/4页 |
| 文件大小： | 0K |
| 代理商： | MMBF4393LT3 |
MMBF4391LT1 MMBF4392LT1 MMBF4393LT1
http://onsemi.com
512
Figure 10. Effect of IDSS on Drain–Source
Resistance and Gate–Source Voltage
IDSS, ZERO-GATE VOLTAGE DRAIN CURRENT (mA)
,DRAIN-SOURCE
ON-ST
AT
E
DS(on)r
20
10
30
40
50
30 40 50 60 70
20
RESIST
ANCE
(OHMS)
0
10
0
1.0
2.0
3.0
4.0
5.0
,GA
TE-SOURCE
VOL
TAGE
GS
V
(VOL
TS)
Tchannel = 25°C
VGS(off)
rDS(on) @ VGS = 0
6.0
7.0
8.0
9.0
10
70
60
80
90
100
80 90 100 110 120 130 140 150
NOTE 2
The Zero–Gate–Voltage Drain Current (IDSS) is the principle
determinant of other J–FET characteristics. Figure 10 shows
the relationship of Gate–Source Off Voltage (VGS(off)) and
Drain–Source On Resistance (rDS(on)) to IDSS. Most of the de-
vices will be within
±10% of the values shown in Figure 10.
This data will be useful in predicting the characteristic varia-
tions for a given part number.
For example:
Unknown
rDS(on) and VGS range for an MMBF4392
The electrical characteristics table indicates that an
MMBF4392 has an IDSS range of 25 to 75 mA. Figure 10
shows rDS(on) = 52 Ohms for IDSS = 25 mA and 30 Ohms for
IDSS = 75 mA. The corresponding VGS values are 2.2 volts and
4.8 volts.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBF4393LT3G | 功能描述:JFET SS JFET NCH 30V TR RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| MMBF4416 | 功能描述:射频JFET晶体管 NCh RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:N-Channel 正向跨导 gFS（最大值/最小值）: 电阻汲极/源极 RDS（导通）: 漏源电压 VDS:40 V 闸/源截止电压:5 V 闸/源击穿电压:40 V 最大漏极/栅极电压:40 V 漏极电流（Vgs=0 时的 Idss）:25 mA to 75 mA 漏极连续电流: 功率耗散:250 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-23 封装:Reel |
| MMBF4416_09 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel RF Amplifiers |
| MMBF4416_Q | 功能描述:射频JFET晶体管 NCh RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:N-Channel 正向跨导 gFS（最大值/最小值）: 电阻汲极/源极 RDS（导通）: 漏源电压 VDS:40 V 闸/源截止电压:5 V 闸/源击穿电压:40 V 最大漏极/栅极电压:40 V 漏极电流（Vgs=0 时的 Idss）:25 mA to 75 mA 漏极连续电流: 功率耗散:250 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-23 封装:Reel |
| MMBF4416A | 功能描述:JFET N-Channel Switch RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
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