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参数资料
| 型号： | MMBF5457LT3 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 25 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB |
| 封装： | CASE 318-08, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 137K |
| 代理商： | MMBF5457LT3 |
JFET - General Purpose
Transistor
N–Channel
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDS
25
Vdc
Drain–Gate Voltage
VDG
25
Vdc
Reverse Gate–Source Voltage
VGS(r)
25
Vdc
Gate Current
IG
10
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR–5 Board(1)
TA = 25°C
Derate above 25
°C
PD
225
1.8
mW
mW/
°C
Thermal Resistance, Junction to Ambient
RqJA
556
°C/W
Junction and Storage Temperature
TJ, Tstg
–55 to +150
°C
DEVICE MARKING
MMBF5457LT1 = 6D
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage
(IG = 10 Adc, VDS = 0)
V(BR)GSS
25
–
Vdc
Gate Reverse Current
(VGS = 15 Vdc, VDS = 0)
(VGS = 15 Vdc, VDS = 0, TA = 100°C)
IGSS
–
1.0
200
nAdc
Gate Source Cutoff Voltage
(VDS = 15 Vdc, ID = 10 nAdc)
VGS(off)
0.5
–
–6.0
Vdc
Gate Source Voltage
(VDS = 15 Vdc, ID = 100 Adc)
VGS
–
–2.5
–
Vdc
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current(2)
(VDS = 15 Vdc, VGS = 0)
IDSS
1.0
–
5.0
mAdc
1. FR–5 = 1.0
0.75 0.062 in.
2. Pulse Test: Pulse Width
≤ 630 ms, Duty Cycle ≤ 10%.
ON Semiconductort
Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 1
518
Publication Order Number:
MMBF5457LT1/D
MMBF5457LT1
1
2
3
CASE 318–08, STYLE 10
SOT–23 (TO–236AB)
2 SOURCE
3
GATE
1 DRAIN
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相关代理商/技术参数 |
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|---|---|
| MMBF5458 | 功能描述:JFET N-Channel Transistor General Purpose RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| MMBF5458_Q | 功能描述:JFET N-Channel Transistor General Purpose RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| MMBF5459 | 功能描述:JFET N-Channel Transistor General Purpose RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| MMBF5459_Q | 功能描述:JFET N-Channel Transistor General Purpose RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| MMBF5460 | 功能描述:JFET P-Channel Transistor General Purpose RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
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