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参数资料
| 型号： | MMBF5457LT3 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 25 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB |
| 封装： | CASE 318-08, 3 PIN |
| 文件页数： | 3/3页 |
| 文件大小： | 137K |
| 代理商： | MMBF5457LT3 |
MMBF5457LT1
http://onsemi.com
520
TYPICAL CHARACTERISTICS
VDS, DRAIN-SOURCE VOLTAGE (VOLTS)
Figure 4. Typical Drain Characteristics
VGS, GATE-SOURCE VOLTAGE (VOLTS)
Figure 5. Common Source Transfer
Characteristics
VDS, DRAIN-SOURCE VOLTAGE (VOLTS)
Figure 6. Typical Drain Characteristics
VGS, GATE-SOURCE VOLTAGE (VOLTS)
Figure 7. Common Source Transfer
Characteristics
0
4
3
2
1
0
10
4
2
0
-4
5
510
15
20
25
5
4
3
2
1
0
-7
8
6
-6
-5
-4
-3
-2
-1
-5
-3
-2
-1
0
,DRAIN
CURRENT
(mA)
DI
VDS = 15 V
VGS(off) ^ -5.8 V
,DRAIN
CURRENT
(mA)
DI
,DRAIN
CURRENT
(mA)
DI
,DRAIN
CURRENT
(mA)
DI
VDS = 15 V
10
4
2
0
8
6
0
5
10
15
20
25
VGS(off) ^ -5.8 V
VGS = 0 V
-2 V
-1 V
-3 V
-1 V
-2 V
-3 V
-4 V
-5 V
VGS(off) ^ -3.5 V
Note: Graphical data is presented for dc conditions. Tabular
data is given for pulsed conditions (Pulse Width = 630
ms, Duty Cycle = 10%). Under dc conditions, self heat-
ing in higher IDSS units reduces IDSS.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBF5458 | 功能描述:JFET N-Channel Transistor General Purpose RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| MMBF5458_Q | 功能描述:JFET N-Channel Transistor General Purpose RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| MMBF5459 | 功能描述:JFET N-Channel Transistor General Purpose RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| MMBF5459_Q | 功能描述:JFET N-Channel Transistor General Purpose RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| MMBF5460 | 功能描述:JFET P-Channel Transistor General Purpose RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
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