参数资料
型号: MMBF5460L99Z
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: 小信号晶体管
英文描述: P-CHANNEL, Si, SMALL SIGNAL, JFET
文件页数: 1/5页
文件大小: 114K
代理商: MMBF5460L99Z
G
D
S
2N5460
2N5461
2N5462
MMBF5460
MMBF5461
MMBF5462
P-Channel General Purpose Amplifier
This device is designed primarily for low level audio and general
purpose applications with high impedance signal sources. Sourced
from Process 89.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
-
Symbol
Parameter
Value
Units
VDG
Drain-Gate Voltage
- 40
V
VGS
Gate-Source Voltage
40
V
IGF
Forward Gate Current
10
mA
TJ ,Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
Symbol
Characteristic
Max
Units
2N5460-5462
*MMBF5460-5462
PD
Total Device Dissipation
Derate above 25
°C
350
2.8
225
1.8
mW
mW/
°C
RθJC
Thermal Resistance, Junction to Case
125
°C/W
RθJA
Thermal Resistance, Junction to Ambient
357
556
°C/W
G
S
D
TO-92
SOT-23
Mark: 6E / 61U / 61V
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
2001 Fairchild Semiconductor Corporation
NOTE: Source & Drain
are interchangeable
2N5460
/
5461
/
5462
/
MMBF5460
/
MMBF5461
/
MMBF5462
2N5460/5461/5462/MMBF5460/5461/5462, Rev A
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