参数资料
型号: MMBFJ310LT3G
厂商: ON Semiconductor
文件页数: 3/5页
文件大小: 108K
描述: JFET N-CH 25V SOT-23
标准包装: 10,000
晶体管类型: N 通道 JFET
额定电流: 60mA
电压 - 额定: 25V
封装/外壳: TO-236-3,SC-59,SOT-23-3
供应商设备封装: SOT-23-3(TO-236)
包装: 带卷 (TR)
MMBFJ309L, MMBFJ310L, SMMBFJ309L, SMMBFJ310L
http://onsemi.com
3
70
60
50
40
30
20
, SATURATION DRAIN CURRENT (mA)
-5.0 -4.0 -3.0 -2.0
-1.0 0
0
ID
- V
GS, GATE-SOURCE VOLTAGE (VOLTS)
I
DSS
10
70
60
50
40
30
20
10
, DRAIN CURRENT (mA)
I
D
IDSS
- V
GS, GATE-SOURCE CUTOFF VOLTAGE (VOLTS)
Figure 1. Drain Current and Transfer
Characteristics versus Gate?Source Voltage
VDS
= 10 V
IDSS
+°C
TA
= -
°C
+°C
+°C
-°C
+150°C
+150°C
ID, DRAIN CURRENT (mA)
100 k
10 k
1.0 k
100
0.01 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
1.0 k
100
10
1.0
, FORWARD TRANSCONDUCTANCE ( mhos)
Y
fs
μ
, OUTPUT ADMITTANCE ( mhos)
Y
os
μ
VGS(off)
= -
VGS(off)
= -
Figure 2. Common?Source Output
Admittance and Forward Transconductance
versus Drain Current
Yfs
Yfs
Yos
VGS, GATE SOURCE VOLTAGE (VOLTS)
5.0 4.0 3.0 2.0 1.0 00
6.0
7.0
8.0
9.0
10
CAPACITANCE (pF)
10
7.0
4.0
1.0
0
120
96
72
48
24
, ON RESISTANCE (OHMS)
R
DS
RDS
Cgs
Cgd
Figure 3. On Resistance and Junction
Capacitance versus Gate?Source Voltage
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