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| 型号： | NTD6414AN-1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 32A IPAK |
| 产品目录绘图： | MOSFET IPAK-3 |
| 标准包装： | 75 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 32A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 37 毫欧 @ 32A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 40nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1450pF @ 25V |
| 功率 - 最大： | 100W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-251-3 短引线，IPak，TO-251AA |
| 供应商设备封装： | I-Pak |
| 包装： | 管件 |
| 其它名称： | NTD6414AN-1G-ND NTD6414AN-1GOS |
NTD6414AN, NVD6414AN
N-Channel Power MOSFET
100 V, 32 A, 37 m W
Features
? Low R DS(on)
? High Current Capability
? 100% Avalanche Tested
? AEC Q101 Qualified ? NVD6414AN
? These Devices are Pb ? Free and are RoHS Compliant
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
V (BR)DSS
100 V
http://onsemi.com
R DS(on) MAX
37 m W @ 10 V
I D MAX
(Note 1)
32 A
Parameter
Symbol
Value
Unit
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage ? Continuous
Continuous Drain Steady T C = 25 ° C
Current R q JC State
T C = 100 ° C
V DSS
V GS
I D
100
$ 20
32
22
V
V
A
N ? Channel
D
Power Dissipation
R q JC
Steady
State
T C = 25 ° C
P D
100
W
G
Pulsed Drain Current
t p = 10 m s
I DM
117
A
Operating and Storage Temperature Range
Source Current (Body Diode)
T J , T stg
I S
? 55 to
+175
32
° C
A
S
4
Single Pulse Drain ? to ? Source Avalanche
Energy (V DD = 50 Vdc, V GS = 10 Vdc,
I L(pk) = 32 A, L = 0.3 mH, R G = 25 W )
Lead Temperature for Soldering
Purposes, 1/8 ″ from Case for 10 Seconds
E AS
T L
154
260
mJ
° C
1 2
3
DPAK
4
1
2
3
IPAK
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Unit
CASE 369AA
STYLE 2
CASE 369D
STYLE 2
Junction ? to ? Case (Drain) Steady State R q JC 1.5 ° C/W
Junction ? to ? Ambient (Note 1) R q JA 37
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [1 oz] including traces).
MARKING DIAGRAM
& PIN ASSIGNMENTS
4 Drain 4 Drain
1
Gate
2
Drain
3
Source
1
Gate
2
3
Source
6414AN
Y
WW
G
= Device Code
= Year
= Work Week
= Pb ? Free Package
Drain
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
? Semiconductor Components Industries, LLC, 2011
October, 2011 ? Rev. 1
1
Publication Order Number:
NTD6414AN/D
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