- 您现在的位置：买卖IC网 > PDF目录21729 > NTD6414AN-1G (ON Semiconductor)MOSFET N-CH 100V 32A IPAK PDF资料下载
参数资料
| 型号： | NTD6414AN-1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 32A IPAK |
| 产品目录绘图： | MOSFET IPAK-3 |
| 标准包装： | 75 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 32A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 37 毫欧 @ 32A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 40nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1450pF @ 25V |
| 功率 - 最大： | 100W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-251-3 短引线，IPak，TO-251AA |
| 供应商设备封装： | I-Pak |
| 包装： | 管件 |
| 其它名称： | NTD6414AN-1G-ND NTD6414AN-1GOS |
NTD6414AN, NVD6414AN
ELECTRICAL CHARACTERISTIC S (T J = 25 ° C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = 250 m A
100
107
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V,
V DS = 100 V
T J = 25 ° C
T J = 125 ° C
1.0
100
m A
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = " 20 V
" 100
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
V GS(TH)
V GS(TH) /T J
V GS = V DS , I D = 250 m A
2.0
8.3
4.0
V
mV/ ° C
Drain ? to ? Source On ? Resistance
Forward Transconductance
R DS(on)
gFS
V GS = 10 V, I D = 32 A
V GS = 5.0 V, I D = 10 A
30
18
37
m W
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C ISS
1450
pF
Output Capacitance
Reverse Transfer Capacitance
C OSS
C RSS
V GS = 0 V, f = 1.0 MHz, V DS = 25 V
230
95
Total Gate Charge
Threshold Gate Charge
Q G(TOT)
Q G(TH)
40
1.7
nC
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Q GS
Q GD
V GS = 10 V, V DS = 80 V, I D = 32 A
8.0
20
Plateau Voltage
Gate Resistance
V GP
R G
5.9
1.9
V
W
SWITCHING CHARACTERISTICS (Not e 4)
Turn ? On Delay Time
t d(on)
11
ns
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(off)
t f
V GS = 10 V, V DD = 80 V,
I D = 32 A, R G = 6.1 W
52
38
48
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V, I S = 32 A
T J = 25 ° C
T J = 125 ° C
0.87
0.76
1.2
V
Reverse Recovery Time
t RR
68
ns
Charge Time
Discharge Time
T a
T b
V GS = 0 V, dI S /dt = 100 A/ m s,
I S = 32 A
51
16
Reverse Recovery Charge
Q RR
195
nC
2. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
3. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
2
相关PDF资料 |
PDF描述 |
|---|---|
| ST5ETW103 | TRIMMER 10K OHM 0.25W SMD |
| ST5ETX502 | TRIMMER 5K OHM 0.25W SMD |
| ST5ETP102 | TRIMMER 1K OHM 0.25W SMD |
| DMM4P22K-F | CAP FILM 0.22UF 400VDC RADIAL |
| DMM2P68K-F | CAP FILM 0.68UF 250VDC RADIAL |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NTD6414ANT4G | 功能描述:MOSFET NFET DPAK 100V 34A 38MO RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD6415AN | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:N-Channel Power MOSFET 100 V, 23 A, 55 mΩ |
| NTD6415AN-1G | 功能描述:MOSFET NFET IPAK 100V 22A 55MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD6415ANL | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:N-Channel Power MOSFET 100 V, 23 A, 56 m??, Logic Level |
| NTD6415ANLT4G | 功能描述:MOSFET 100V HD3E NCH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。