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参数资料
| 型号： | MMBR911LT1 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | PLASTIC, CASE 318-08, 3 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 135K |
| 代理商： | MMBR911LT1 |
MMBR911LT1
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 1.0 mA, IB = 0)
V(BR)CEO
12
—
Vdc
Collector–Base Breakdown Voltage
(IC = 0.1 mA, IE = 0)
V(BR)CBO
20
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 0.1 mA, IC = 0)
V(BR)EBO
2.0
—
Vdc
Collector Cutoff Current
(VCB = 15 Vdc, IE = 0)
ICBO
—
50
nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 30 mAdc, VCE = 10 Vdc)
hFE
30
—
200
—
DYNAMIC CHARACTERISTICS
Collector–Base Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Ccb
—
1.0
pF
Current Gain–Bandwidth Product
(VCE = 10 Vdc, IC = 30 mAdc, f = 1.0 GHz)
fT
—
6.0
—
GHz
FUNCTIONAL TESTS
Gain @ Noise Figure
(IC = 10 mAdc, VCE = 10 Vdc)
f = 0.5 GHz
f = 1.0 GHz
GNF
—
17
11
—
dB
Noise Figure
(IC = 10 mAdc, VCE = 10 Vdc)
f = 0.5 GHz
f = 1.0 GHz
NF
—
2.0
2.9
—
dB
Figure 1. Current Gain–Bandwidth versus
Collector Current @ 1.0 GHz
10
8
6
4
2
0
IC, COLLECTOR CURRENT (mA)
010
20
30
40
f T
,CURRENT
GAIN-BANDWIDTH
PRODUCT
(GHz)
VCE = 10 V
f = 1 GHz
50
ARCHIVE
INFORMA
TION
ARCHIVE
INFORMA
TION
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Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
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