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参数资料
| 型号： | MMBT2222LT1 |
| 厂商： | RECTRON LTD |
| 元件分类： | 小信号晶体管 |
| 中文描述： | NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | PLASTIC, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 786K |
| 代理商： | MMBT2222LT1 |
RECTRON
SEMICONDUCTOR
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.008 gram
SOT-23
MMBT2222LT1
Dimensions in inches and (millimeters)
2006-3
ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted )
NOTES :
Max. Instantaneous Forward Voltage at IF= 10mA
CHARACTERISTICS
SYMBOL
UNITS
417
-
Volts
oC/W
Thermal Resistance Junction to Ambient
RATINGS
Zener Current ( see Table "Characteristics" )
Max. Steady State Power Dissipation (1) @TA=25
oC Derate above 25oC
Max. Operating Temperature Range
Storage Temperature Range
SYMBOL
-
PD
TJ
TSTG
R θJA
VF
VALUE
MAX.
-
TYP.
-
MIN.
UNITS
-
mW
-
300
1. Alumina=0.4*0.3*0.024in. 99.5% alumina.
-55 to +150
oC
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
OC ambient temperature unless otherwise specified.
0.118(3.000)
0.012(0.30)
0.020(0.50)
0.003(0.080)
0.006(0.150)
0.110(2.800)
0.019(2.00)
0.071(1.80)
0.100(2.550)
0.089(2.250)
0.020(0.500)
0.012(0.300)
0.043(1.100)
0.035(0.900)
0.004(0.100)
0.000(0.000)
0.037(0.950)TYP
TECHNICAL SPECIFICATION
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(NPN)
FEATURES
*
Power dissipation
PCM
0.3 W(Tamb=25OC)
Collector current
ICM
0.6
A
Collector-base voltage
V(BR)CBO: 60 V
Operating and storage junction temperature range
TJ,Tstg: -55
OCto+150OC
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBT2222LT1/D | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:General Purpose Transistors NPN Silicon |
| MMBT2222LT1_01 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:General Purpose Transistors NPN Silicon |
| MMBT2222LT1_06 | 制造商:COMCHIP 制造商全称:Comchip Technology 功能描述:General Purpose Transistors NPN Silicon |
| MMBT2222LT1D | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:General Purpose Transistors NPN Silicon |
| MMBT2222LT1G | 功能描述:两极晶体管 - BJT 600mA 75V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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