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参数资料
| 型号： | MMBT2222LT1 |
| 厂商： | RECTRON LTD |
| 元件分类： | 小信号晶体管 |
| 中文描述： | NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | PLASTIC, 3 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 786K |
| 代理商： | MMBT2222LT1 |
ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted)
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL-SIGNAL CHARACTERISTICS
Chatacteristic
Collector-Emitter Breakdown Voltage (IC= 10mAdc, IB= 0)
Collector-Base Breakdown Voltage (IC= 10Adc, IE= 0)
Emitter-Base Breakdown Voltage (IE= 10Adc, IC= 0)
Collector Cutoff Current (VCE= 60Vdc,VEB(off)= 3.0Vdc
Collector Cutoff Current (VCB= 60Vdc, IE= 0)
(VCB= 60Vdc, IE= 0, TA= 125
OC)
DC Current Gain (IC= 0.1mAdc, VCE= 10Vdc)
Collector-Emitter Saturation Voltage (2) (IC= 150mAdc, IB= 15mAdc)
(IC= 1.0mAdc, VCE= 10Vdc)
(IC= 10mAdc, VCE= 10Vdc)
(IC= 150mAdc, VCE= 10Vdc) (2)
(IC= 500mAdc, VCE= 10Vdc) (2)
V(BR)CEO
30
-
Vdc
V(BR)CBO
60
-
Vdc
V(BR)EBO
5.0
-
Vdc
ICEX
ICBO
-
0.1
-
0.01
-
10
Adc
Vdc
fT
250
-
MHz
hFE
35
-
50
75
100
30
-
VCE(sat)
-
0.4
-
1.6
Adc
Symbol
Min
Max
Unit
(IC= 500mAdc, IB= 50mAdc)
Base-Emitter Saturation Voltage (2) (IC= 150mAdc, IB= 15mAdc)
Current-Gain-Bandwidth Product (3) (IC= 20mAdc, VCE= 20Vdc, f= 100MHz)
Cibo
-
30
pF
Input Capacitance (VEB=0.5Vdc, IC= 0, f= 1.0MHz)
Vdc
VBE(sat)
-
1.3
-
2.6
(IC= 500mAdc, IB= 50mAdc)
RECTRON
NOTES : 2. Pulse Test: Pulse Width<300
s,Duty Cycle<2.0%
3. fT is defined as the frequency at which |hfe| extrapolates to unity
-
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBT2222LT1/D | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:General Purpose Transistors NPN Silicon |
| MMBT2222LT1_01 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:General Purpose Transistors NPN Silicon |
| MMBT2222LT1_06 | 制造商:COMCHIP 制造商全称:Comchip Technology 功能描述:General Purpose Transistors NPN Silicon |
| MMBT2222LT1D | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:General Purpose Transistors NPN Silicon |
| MMBT2222LT1G | 功能描述:两极晶体管 - BJT 600mA 75V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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