参数资料
型号: MMBR941LT1
厂商: FREESCALE SEMICONDUCTOR INC
元件分类: 小信号晶体管
英文描述: Si, NPN, RF SMALL SIGNAL TRANSISTOR
封装: CASE 318-08, 3 PIN
文件页数: 8/14页
文件大小: 269K
代理商: MMBR941LT1
3
MMBR941 MRF947 SERIES
MOTOROLA RF DEVICE DATA
PERFORMANCE CHARACTERISTICS
Conditions
Symbol
MMBR941LT1, T3
MRF947 Series
Unit
Conditions
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Insertion Gain
(VCE = 6.0 V, IC = 15 mA, f = 1.0 GHz)
(VCE = 6.0 V, IC = 15 mA, f = 2.0 GHz)
|S21|2
14
8.0
14
10.8
dB
Maximum Unilateral Gain (1)
(VCE = 6.0 V, IC = 15 mA, f = 1.0 GHz)
(VCE = 6.0 V, IC = 15 mA, f = 2.0 GHz)
GUmax
16
10
14.8
11.6
dB
Noise Figure — Minimum (Figure 9)
(VCE = 6.0 V, IC = 5.0 mA, f = 1.0 GHz)
(VCE = 6.0 V, IC = 5.0 mA, f = 2.0 GHz)
NFMIN
1.5
2.1
1.5
2.1
dB
Associated Gain at Minimum NF (Figure 9)
(VCE = 6.0 V, IC = 5.0 mA, f = 1.0 GHz)
(VCE = 6.0 V, IC = 5.0 mA, f = 2.0 GHz)
GNF
14
8.5
14
10
dB
Noise Figure — 50 ohm Source
(VCE = 6.0 V, IC = 5.0 mA, f = 1.0 GHz)
NF50
1.9
2.8
1.9
2.8
dB
NOTE:
1. Maximum Unilateral Gain is GUmax =
|S
21
|2
,INSER
TION
GAIN
(dB)
Figure 1. Collector–Base Capacitance
versus Voltage
Figure 2. DC Current Gain versus
Collector Current
Figure 3. Gain Bandwidth Product versus
Collector Current
Figure 4. Insertion Gain versus Collector Current
TYPICAL CHARACTERISTICS
MMBR941LT1, T3; MMBR941BLT1
IC, COLLECTOR CURRENT (mA)
VCE = 6 V
f = 1 GHz
24
20
16
12
8
4
0
12
3
5
10
7
20
100
70
50
30
VCE = 6 V
f = 1 GHz
IC, COLLECTOR CURRENT (mA)
12
10
8
6
4
2
0
12
3
5
10
7
20
100
70
50
30
IC, COLLECTOR CURRENT (mA)
200
100
70
50
30
20
10
12
3
5
10
7
20
100
70
50
30
300
12
3
5
7
10
1
0.7
0.5
0.1
0.2
0.3
f T
,GAIN
BANDWIDTH
PRODUCT
(GHz)
h
FE
,DC
CURRENT
GAIN
C
CB
,CAP
ACIT
ANCE
(pF)
VCB, REVERSE VOLTAGE (V)
MMBR941LT1, T3
f = 1 MHz
|S21|2
(1
– |S11|2)(1 – |S22|2)
ARCHIVE
INFORMA
TION
ARCHIVE
INFORMA
TION
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Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
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