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参数资料
| 型号： | MMBT2907A-GS18 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 2/4页 |
| 文件大小： | 85K |
| 代理商： | MMBT2907A-GS18 |
www.vishay.com
2
Document Number 85143
Rev. 1.2, 27-Oct-04
VISHAY
MMBT2907A
Vishay Semiconductors
Electrical DC Characteristics
1) Pulse test: Pulse width
≤ 300 s, duty cycle ≤ 2.0 %
Electrical AC Characteristics
Switching Characteristics
Parameter
Test condition
Symbol
Min
Typ
Max
Unit
DC current gain
- VCE = 10 V, - IC = 0.1 mA
hFE
75
- VCE = 10 V, - IC = 1 mA
hFE
100
- VCE = 10 V, - IC = 10 mA
hFE
100
- VCE = 10 V, - IC = 150 mA
1)
hFE
100
300
- VCE = 10 V, - IC = 500 mA
1)
hFE
50
Collector cut - off current
- VEB = 0.5 V, - VCE = 30 V
- ICEV
50
nA
- VCB = 50 V, IE = 0
- ICBO
0.01
A
- VCB = 50 V, IE = 0, TA = 125 °C
- ICBO
10
A
Emitter - base cut - off current
- VEB = 0.5 V, - VCE = 30 V
- IBL
50
nA
Collector - emiter saturation
voltage1)
- IC = 150 mA, - IB = 15 mA
- VCEsat
0.4
V
- IC = 500 mA, - IB = 50 mA
- VCEsat
1.6
V
Base - emitter saturation voltage - IC = 150 mA, - IB = 15 mA
- VBEsat
1.3
V
- IC = 500 mA, - IB = 50 mA
- VBEsat
2.6
V
Collector - emitter breakdown
voltage1)
- IC = 10 A, IB = 0
- V(BR)CEO
60
V
Collector - base breakdown
voltage
- IC = 10 A, IE = 0
- V(BR)CBO
60
V
Emitter - base breakdown
voltage
- IE = 10 A, IC = 0
- V(BR)EBO
5.0
V
Parameter
Test condition
Symbol
Min
Typ
Max
Unit
Gain - bandwidth product
- VCE = 20 V, - IC = 50 mA,
f = 100 MHz
fT
200
MHz
Output capacitance
- VCB = 10 V, f = 1 MHz, IE = 0
Cob
8pF
Input capacitance
- VEB = 2 V, f = 1 MHz, IC = 0
Cibo
30
pF
Parameter
Test condition
Symbol
Min
Typ
Max
Unit
Turn - ON time
- IB1 = 15 mA, - IC = 150 mA,
- VCC = 30 V
ton
45
ns
Delay time
- IB1 = 15 mA, - IC = 150 mA,
- VCC = 30 V
td
10
ns
Rise time
- IB1 = 15 mA, - IC = 150 mA,
- VCC = 30 V
tr
40
ns
Turn - OFF
- IB1 = 15 mA, - IC = 150 mA,
- VCC = 6 V
toff
100
ns
Storage time
- IB1= - IB2 = 15 mA,
- IC = 150 mA, - VCC = 6 V
ts
80
ns
Fall time
- IB1 = - IB2 = 15 mA,
- IC = 150 mA, - VCC = 6 V
tf
30
ns
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