- 您现在的位置：买卖IC网 > PDF目录95964 > MMBT2907AL-AL3-R (UNISONIC TECHNOLOGIES CO LTD) 800 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR PDF资料下载
参数资料
| 型号： | MMBT2907AL-AL3-R |
| 厂商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 800 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | LEAD FREE PACKAGE-3 |
| 文件页数： | 2/6页 |
| 文件大小： | 246K |
| 代理商： | MMBT2907AL-AL3-R |
MMBT2907A
PNP SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 6
www.unisonic.com.tw
QW-R220-001.D
ABSOLUTE MAXIMUM RATING (Ta=25°С unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Emitter Voltage
VCEO
-60
V
Collector-Base Voltage
VCBO
-60
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current Continuous
IC
-800
mA
SOT-23
350
mW
Power Dissipation
SOT-323
PD
275
mW
Junction Temperature
TJ
+150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
SOT-23
357
°C/W
Junction to Case
SOT-323
θJA
455
°C/W
ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (Note)
BVCEO IC=-10mA, IB=0
-
60
V
Collector-Base Breakdown Voltage
BVCBO IC=-10μA, IE=0
-60
V
Emitter-Base Breakdown Voltage
BVEBO IE=-10μA , IC=0
-
5
V
Base Cutoff Current
IB
VCB=-30V, VEB=-0.5V
-
50
nA
Collector Cutoff Current
ICEX
VCE=-30V, VBE=-0.5V
-
50
nA
VCB=-50V, IE=0
-
0.02
μA
Collector Cutoff Current
ICBO
VCB=-50V, IE=0, TA=150°С
-
20
μA
ON CHARACTERISTICS
IC=-0.1mA, VCE=-10V
75
IC=-1.0 mA, VCE=-10V
100
IC=-10 mA, VCE=-10V
100
IC=-150 mA, VCE=-10V (Note)
100
300
DC Current Gain
hFE
IC=-500 mA, VCE=-10V (Note)
50
IC=-150 mA, IB=-15mA
-
0.4
V
Collector-Emitter Saturation Voltage (Note)
VCE(SAT)
IC=-500 mA, IB=-50mA
-
1.6
V
IC=-150 mA, IB=-15mA (Note)
-
1.3
V
Base-Emitter Saturation Voltage
VBE(SAT)
IC=-500 mA, IB=-50mA
-
2.6
V
SMALL SIGNAL CHARACTERISTICS
Current Gain – Bandwidth Product
fT
IC=-50mA, VCE=-20V, f=100MHz
200
MHz
Output Capacitance
Cob
VCB=-10V, IE=0, f=100kHz
8
pF
Input Capacitance
Cib
VEB=-2V, IC=0, f=100kHz
30
pF
SWITCHING CHARACTERISTICS
Turn-on Time
tON
45
ns
Delay Time
tDLY
10
ns
Rise Time
tR
VCC=30V, IC=-150mA,
IB1=-15mA
40
ns
Turn-off Time
tOFF
100
ns
Storage Time
tS
80
ns
Fall Time
tF
VCC=6V, IC=-150mA,
IB1= IB2=-15mA
30
ns
Note: Pulse Test: Pulse Width
≤ 300ms, Duty Cycle≤2.0%
相关PDF资料 |
PDF描述 |
|---|---|
| MMBT2907A-AE3-R | 800 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| MMBT2907A-AL3-R | 800 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| MMBT2907AL | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| MMBT2907L | 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| MMBT2907ARF | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBT2907ALT1 | 功能描述:两极晶体管 - BJT 600mA 60V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBT2907ALT1G | 功能描述:两极晶体管 - BJT 600mA 60V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBT2907ALT1G | 制造商:ON Semiconductor 功能描述:Bipolar Transistor |
| MMBT2907ALT1HTSA1 | 制造商:Infineon Technologies AG 功能描述:Trans GP BJT PNP 60V 0.6A 3-Pin SOT-23 T/R 制造商:Infineon Technologies AG 功能描述:AF TRANSISTORS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:TRANSISTOR SWITCHING PNP SOT-23 |
| MMBT2907ALT1XT | 制造商:Infineon Technologies AG 功能描述:AF TRANS,SOT 23, 3K T&R WITH MMBT LABEL |
发布紧急采购，3分钟左右您将得到回复。