- 您现在的位置：买卖IC网 > PDF目录95981 > MMBT2907AS62Z (FAIRCHILD SEMICONDUCTOR CORP) 800 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR PDF资料下载
参数资料
| 型号： | MMBT2907AS62Z |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 800 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 文件页数： | 2/6页 |
| 文件大小： | 59K |
| 代理商： | MMBT2907AS62Z |
PN2907A
/
MMBT2907A
/
MMPQ2907
/
NMT2907
/
PZT2907A
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS (except MMPQ2907 and NMT2907)
fT
Current Gain - Bandwidth Product
IC = 50 mA, VCE = 20 V,
f = 100 MHz
200
MHz
Cobo
Output Capacitance
VCB = 10 V, IE = 0,
f = 100 kHz
8.0
pF
Cibo
Input Capacitance
VEB = 2.0 V, IC = 0,
f = 100 kHz
30
pF
SWITCHING CHARACTERISTICS (except MMPQ2907 and NMT2907)
ton
Turn-on Time
VCC = 30 V, IC = 150 mA,
45
ns
td
Delay Time
IB1 = 15 mA
10
ns
tr
Rise Time
40
ns
toff
Turn-off Time
VCC = 6.0 V, IC = 150 mA
100
ns
ts
Storage Time
IB1 = IB2 = 15 mA
80
ns
tf
Fall Time
30
ns
*Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%
Spice Model
Symbol
Parameter
Test Conditions
Min
Max
Units
V(BR)CEO
Collector-Emitter Breakdown Voltage*
IC = 10 mA, IB = 060V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 10
A, I
E = 0
60
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10
A, I
C = 0
5.0
V
IB
Base Cutoff Current
VCB = 30 V, VEB = 0.5 V
50
nA
ICEX
Collector Cutoff Current
VCE = 30 V, VBE = 0.5 V
50
nA
ICBO
Collector Cutoff Current
VCB = 50 V, IE = 0
VCB = 50 V, IE = 0, TA = 150
°C
0.02
20
A
hFE
DC Current Gain
IC = 0.1 mA, VCE = 10 V
IC = 1.0 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 150 mA, VCE = 10 V*
IC = 500 mA, VCE = 10 V*
75
100
50
300
VCE(sat)
Collector-Emitter Saturation Voltage*
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
0.4
1.6
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 150 mA, IB = 15 mA*
IC = 500 mA, IB = 50 mA
1.3
2.6
V
PNP (Is=650.6E-18 Xti=3 Eg=1.11 Vaf=115.7 Bf=231.7 Ne=1.829 Ise=54.81f Ikf=1.079 Xtb=1.5 Br=3.563 Nc=2
Isc=0 Ikr=0 Rc=.715 Cjc=14.76p Mjc=.5383 Vjc=.75 Fc=.5 Cje=19.82p Mje=.3357 Vje=.75 Tr=111.3n Tf=603.7p
Itf=.65 Vtf=5 Xtf=1.7 Rb=10)
PNP General Purpose Amplifier
(continued)
相关PDF资料 |
PDF描述 |
|---|---|
| MMBT2907AL99Z | 800 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| MMPQ2907L86Z | 600 mA, 40 V, 4 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| MMPQ3467/S62Z | 1200 mA, 40 V, 4 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| MMPQ3467/D84Z | 1200 mA, 40 V, 4 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| MMPQ3467/L99Z | 1200 mA, 40 V, 4 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBT2907AT | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMBT2907AT_1 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMBT2907AT_11 | 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:PNP General Purpose Amplifier |
| MMBT2907AT_2 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMBT2907AT-7 | 功能描述:两极晶体管 - BJT -60V 150mW RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
发布紧急采购，3分钟左右您将得到回复。